Xi'an Institute of Optics and Precision Mechanics,CAS
- | |
其他题名 | - |
WADA OSAMU; NOBUHARA HIROYUKI | |
1989-10-23 | |
专利权人 | FUJITSU LTD |
公开日期 | 1989-10-23 |
授权国家 | 日本 |
专利类型 | 授权发明 |
摘要 | PURPOSE:To form mirrors flat and vertical in an optical meaning by a method wherein a wafer with a mask film covering the necessary part is tentatively fixed to a rotary table and then etched by irradiation with reactive ions or the like from the oblique direction while the rotary table is rotated on the axis of the direction parallel with the tentative-fixing surface. CONSTITUTION:Covered with a photo resist film 4 over the photosemiconductor element, a wafer 3 is tentatively fixed on the rotary table While a rotary shaft 2 fixed to the side surface of the rotary table 1 is rotated in the direction of an arrow 6, reactive ion beams 5 are made obliquely incident at an angle of phi to the surface of the wafer 3. Streaks are produced on the mirror surface 7 when the surface of the wafer 3 is almost opposed to the reactive ion beams 5, but as the wafer 3 rotates away off that state, the beams 5 come into irradiation from the side surfaces of the streaks and cut them away; the flat surface of the mirror surface 7 improves. Besides, suitable adjustment of the angle phiof incidence of the beams 5 improves the verticality of the mirror surface 7. |
其他摘要 | 用途:通过一种方法,在光学意义上形成平面和垂直的镜子,其中具有覆盖必要部分的掩模膜的晶片暂时固定到旋转台上,然后通过从倾斜方向照射反应离子等进行蚀刻。旋转台在与临时固定表面平行的方向的轴上旋转。组成:在光半导体元件上覆盖光刻胶膜4,晶片3暂时固定在旋转台1上。固定在旋转台1的侧面的旋转轴2沿箭头6的方向旋转反射离子束5以角度φ倾斜地入射到晶片3的表面。当晶片3的表面几乎与反应离子束5相对时,在镜子表面7上产生条纹,但是作为晶片3从该状态旋转离开,光束5从条纹的侧面进入照射并将它们切掉;镜面7的平坦表面得到改善。此外,适当调整光束5的入射角度可改善镜面7的垂直度。 |
申请日期 | 1984-10-18 |
专利号 | JP1989049029B2 |
专利状态 | 失效 |
申请号 | JP1984217380 |
公开(公告)号 | JP1989049029B2 |
IPC 分类号 | H01L27/15 | H01L21/302 | H01S5/00 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/84589 |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | WADA OSAMU,NOBUHARA HIROYUKI. -. JP1989049029B2[P]. 1989-10-23. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1989049029B2.PDF(202KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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