Semiconductor laser

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser
其他题名	Semiconductor laser
	NOMURA YOSHITOKU; OGATA HITOSHI
	1990-10-03
专利权人	HIKARI GIJUTSU KENKYU KAIHATSU KK
公开日期	1990-10-03
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve a semiconductor laser of this design in external quantum efficiency and differential gain by a method wherein the energy band levels of an active layers, a P-side clad layer, and an N-side clad layer on a valence band are made to become higher than that of the following layer respectively in this sequence, and the conduction band lower end levels of the P-side clad layer, the N-side clad layer, and the active layer are made to become higher than that of the following layer respectively in this sequence. CONSTITUTION:When a forward bias voltage is applied to electrodes 1 and 2, electrons and holes are injected into a multiquantum well layer 3 through diffusion and recombined with radiation. The radiation concerned is conducive to laser oscillation. Even if carriers are injected high in concentration, the potential level of a P-side clad layer 4 is higher than the energy level of the injected electrons and the potential level of an N-side clad layer 5 is higher than the energy level of the injected holes, so that electrons and holes are prevented from entering each other's clad layer. Therefore, the recombination of carriers and a noneffective current do not occur in the layer 4 or the layer 5, in result a laser of this design can be improved in external quantum efficiency and differential gain.
其他摘要	用途：通过一种方法改进本设计的半导体激光器的外部量子效率和微分增益，其中制造有效层，P侧包层和价带上的N侧包层的能带级别在该顺序中，分别高于下一层，并且使P侧包层，N侧包层和有源层的导带下端水平高于以下层的导带下端水平分别按此顺序分层。组成：当正向偏压施加到电极1和2时，电子和空穴通过扩散注入多量子阱层3并与辐射重新组合。所涉及的辐射有助于激光振荡。即使载流子注入高浓度，P侧包层4的电位高于注入电子的能级，并且N侧包层5的电位高于能级。注入空穴，防止电子和空穴进入彼此的包层。因此，在层4或层5中不会发生载流子复合和无效电流，结果可以改善该设计的激光器的外部量子效率和差分增益。
申请日期	1989-03-22
专利号	JP1990248095A
专利状态	失效
申请号	JP1989067438
公开（公告）号	JP1990248095A
IPC 分类号	H01S5/00 \| H01S5/20 \| H01S5/32 \| H01S5/34 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84568
专题	半导体激光器专利数据库
作者单位	HIKARI GIJUTSU KENKYU KAIHATSU KK
推荐引用方式 GB/T 7714	NOMURA YOSHITOKU,OGATA HITOSHI. Semiconductor laser. JP1990248095A[P]. 1990-10-03.

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