Manufacture of semiconductor laser device

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	Manufacture of semiconductor laser device
其他题名	Manufacture of semiconductor laser device
	NAGAI YUTAKA; MIHASHI YUTAKA; YAGI TETSUYA; OTA YOICHIRO
	1988-06-13
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1988-06-13
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent the characteristics of a semiconductor laser device from being deteriorated and the reliability from decreasing by selectively etching a first crystalline grown semiconductor layer to form a stripelike groove, exposing the layer including aluminum, and then forming a semiconductor layer including aluminum through a semiconductor layer which does not contain aluminum on the semiconductor substrate in second crystal growing step. CONSTITUTION:A buffer layer 2 and a current block layer 3 are sequentially grown on a substrate 1 by a first crystal growth. After the growth, a stripelike groove 10 is formed by photolithographic technique and etching. In the case of etching, the layer 2 is exposed. Thus, an oxygen-absorbed film 9 coupled with the aluminum is formed on the surface. Then, a buffer layer 4, a first clad layer 5, an active layer 6, a second clad layer 7 and a contact layer 8 are sequentially grown by a second crystal growth. Here, before the layer 5 made of P-type Al0.43Ga0.57As is grown on the layer 2, the layer 4 made of P-type GaAs is grown. Accordingly, the formation of a high resistance layer on the crystal growing boundary can be suppressed.
其他摘要	用途：通过选择性地蚀刻第一晶体生长半导体层以形成条状沟槽，暴露包括铝的层，然后通过形成包括铝的半导体层，防止半导体激光器件的特性劣化和降低可靠性在第二晶体生长步骤中，在半导体衬底上不含铝的半导体层。组成：缓冲层2和电流阻挡层3通过第一晶体生长顺序生长在基板1上。在生长之后，通过光刻技术和蚀刻形成条纹状凹槽10。在蚀刻的情况下，暴露层2。因此，在表面上形成与铝结合的氧吸收膜9。然后，通过第二晶体生长依次生长缓冲层4，第一覆层5，有源层6，第二覆层7和接触层8。这里，在层2上生长由P型Al0.43Ga0.57As制成的层5之前，生长由P型GaAs制成的层4。因此，可以抑制在晶体生长边界上形成高电阻层。
申请日期	1986-12-02
专利号	JP1988140591A
专利状态	失效
申请号	JP1986288434
公开（公告）号	JP1988140591A
IPC 分类号	H01S5/00 \| H01S5/223 \| H01S5/323 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84553
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI YUTAKA,MIHASHI YUTAKA,YAGI TETSUYA,et al. Manufacture of semiconductor laser device. JP1988140591A[P]. 1988-06-13.

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