Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
HIRAYAMA YUUZOU; OKUDA HAJIME; KINOSHITA JIYUNICHI; UEMATSU YUTAKA | |
1984-08-29 | |
专利权人 | KOGYO GIJUTSUIN (JAPAN) |
公开日期 | 1984-08-29 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To increase an interaction between a diffraction grating and beams, and to enable sufficient threshold oscillation by forming the diffraction grating in a waveguide region consisting of an optical waveguide layer, an InP thin layer, an InP thin layer and an active layer. CONSTITUTION:An N type InGaAsP layer 12 as an optical waveguide is formed on an N type InP substrate 1 A diffraction grating 13 is formed on the layer 12. An N type InP thin layer 14 and an InGaAsP active layer 15 are formed on the layer 12 in succession, and a second clad layer 16 consisting of P type InP and an ohmic contact layer 17 consisting of InGaAsP are formed on the layer 15 in succession. According to such constitution, since there is the diffraction grating 13 in a waveguide region composed of the layer 12, the layer 14 and the layer 15, an interaction between the diffraction grating 13 and beams can be increased sufficiently, and a threshold can be reduced. |
其他摘要 | 目的:增加衍射光栅和光束之间的相互作用,并通过在由光波导层,InP薄层,InP薄层和有源层组成的波导区域中形成衍射光栅来实现足够的阈值振荡。组成:在N型InP基板11上形成作为光波导的N型InGaAsP层12.在层12上形成衍射光栅13.在该层上形成N型InP薄层14和InGaAsP有源层15。连续地形成层12,并且在层15上依次形成由P型InP构成的第二覆层16和由InGaAsP构成的欧姆接触层17。根据这种结构,由于在由层12,层14和层15组成的波导区域中存在衍射光栅13,所以可以充分增加衍射光栅13和光束之间的相互作用,并且可以降低阈值。 |
申请日期 | 1983-02-18 |
专利号 | JP1984151483A |
专利状态 | 失效 |
申请号 | JP1983024731 |
公开(公告)号 | JP1984151483A |
IPC 分类号 | H01S5/00 | H01S5/12 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/84464 |
专题 | 半导体激光器专利数据库 |
作者单位 | KOGYO GIJUTSUIN (JAPAN) |
推荐引用方式 GB/T 7714 | HIRAYAMA YUUZOU,OKUDA HAJIME,KINOSHITA JIYUNICHI,et al. Semiconductor laser device. JP1984151483A[P]. 1984-08-29. |
条目包含的文件 | ||||||
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JP1984151483A.PDF(190KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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