Xi'an Institute of Optics and Precision Mechanics,CAS
| Buried semiconductor laser element | |
| 其他题名 | Buried semiconductor laser element |
| HOSODA MASAHIRO; SASAKI KAZUAKI; KONDO MASAKI; YAMAMOTO SABURO | |
| 1988-07-26 | |
| 专利权人 | SHARP CORP |
| 公开日期 | 1988-07-26 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To effectively utilize an injection current and to contrive to reduce a threshold current by preventing a leakage current at a region apart from striped mesa parts. CONSTITUTION:An n-type GaAs current constricting layer 2 and a p-type GaAs current stopping layer 10 are laminated on a p-type GaAs substrate 1 formed with striped mesa parts 14 by a liquid phase epitaxial growth method. Then, a mask alignment is performed to the mesa parts 14 to form V-shaped groove parts 12 in such a way as to reach the substrate 1 and a p-type GaAlAs clad layer 3, a non-doped GaAlAs active layer 4, an n-type GaAlAs clad layer 5 and an n-type GaAs protective layer 6 are laminated in order by a liquid phase epitaxial growth method. After that, striped mesa parts 13 are formed up to reach the current stopping layer 10 in such a way as to include the groove parts 12, a liquid phase epitaxial growth is performed to form by laminating in order a p-type GaAlAs high-resistance buried first layer 7, a p-type GaAlAs buried second layer 8 and an n GaAs ohmic contact layer 9 and this laminated material is divided along broken lines X-X' to form laser elements. |
| 其他摘要 | 用途：有效利用注入电流，并设法通过防止在条纹台面部分以外的区域产生漏电流来降低阈值电流。组成：n型GaAs电流限制层2和p型GaAs电流阻止层10通过液相外延生长方法层叠在形成有条状台面部分14的p型GaAs衬底1上。然后，对台面部分14进行掩模对准，以形成V形槽部分12，以便到达基板1和p型GaAlAs包层3，非掺杂GaAlAs有源层4，通过液相外延生长方法依次层叠n型GaAlAs包层5和n型GaAs保护层6。之后，形成条纹台面部分13以包括凹槽部分12的方式到达电流停止层10，通过层叠按顺序形成p型GaAlAs高电阻来形成液相外延生长掩埋第一层7，p型GaAlAs掩埋第二层8和n + GaAs欧姆接触层9，并且该层叠材料沿虚线XX'分开以形成激光元件。 |
| 申请日期 | 1987-01-22 |
| 专利号 | JP1988181392A |
| 专利状态 | 失效 |
| 申请号 | JP1987013699 |
| 公开（公告）号 | JP1988181392A |
| IPC 分类号 | H01S5/00 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/84340 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | HOSODA MASAHIRO,SASAKI KAZUAKI,KONDO MASAKI,et al. Buried semiconductor laser element. JP1988181392A[P]. 1988-07-26. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1988181392A.PDF（236KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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