Buried-heterostructure diode injection laser

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	Buried-heterostructure diode injection laser
其他题名	Buried-heterostructure diode injection laser
	BURNHAM ROBERT D.; SCIFRES DONALD R.
	1979-10-30
专利权人	XEROX CORPORATION
公开日期	1979-10-30
授权国家	加拿大
专利类型	授权发明
摘要	BURIED-HETEROSTRUCTURE DIODE INJECTION LASER ABSTRACT OF THE INVENTION A buried-heterostructure (BH) diode injection laser capable of operating at low room temperature thresholds and in the lowest order TE, TM or TEM modes. The laser has an elongated groove in a substrate with the groove extending through a pump current confining layer with a central portion of the active layer substantially completely within the groove and substantially completely surrounded by light guiding and carrier confining layers of material having a lower index of refraction than the index of refraction of the material of the active layer. The light guiding and carrier confining layer in contact with the substrate has a central depression within the elongated groove and the central portion of the active layer is bowl-shaped and within the depression such that light waves produced by carrier recombination within the central portion of the active layer when the laser is forward biased are guided in the central portion of the active layer such that the laser produces a light beam having reduced width v. height dimensional variations such that the light beam can be used with symmetrical optical elements such as round lenses.
其他摘要	埋入式异质结构二极管注入激光器摘要本发明的埋入式异质结构（BH）二极管注入激光器能够在低室温阈值和最低阶TE，TM或TEM模式下操作。激光器在基板中具有细长凹槽，凹槽延伸穿过泵电流限制层，其中有源层的中心部分基本上完全在凹槽内并且基本上完全被具有较低折射率的光导材料和载体限制材料层包围。折射比有源层材料的折射率。与基板接触的光导和载流子限制层在细长槽内具有中心凹陷，并且有源层的中心部分是碗状的并且在凹陷内，使得由载流子复合产生的光波在中心部分内。当激光器正向偏置时，有源层在有源层的中心部分被引导，使得激光器产生具有减小的宽度和高度尺寸变化的光束，使得光束可以与诸如圆形透镜的对称光学元件一起使用。。
申请日期	1976-05-14
专利号	CA1065460A
专利状态	失效
申请号	CA0252590
公开（公告）号	CA1065460A
IPC 分类号	H01S5/24 \| H01S5/223 \| H01L33/00 \| H01L21/208 \| H01S5/00 \| H01S5/042 \| H01S3/19
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84119
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	BURNHAM ROBERT D.,SCIFRES DONALD R.. Buried-heterostructure diode injection laser. CA1065460A[P]. 1979-10-30.

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