Semiconductor device

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor device
其他题名	Semiconductor device
	KASUKAWA AKIHIKO; OKAMOTO HIROSHI
	1992-01-30
专利权人	FURUKAWA ELECTRIC CO LTD:THE
公开日期	1992-01-30
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable a semiconductor device to emit a circular light beam and to be improved in coupling efficiency by a method wherein a light trapping layer specified in composition is provided, and the refractive index of the layer concerned is set smaller than that of an optical waveguide by 0.5-10%. CONSTITUTION:Light trapping layers 21-24 are formed of GaxIn1-xAsyP1-y, and the refractive index of the layers concerned is set smaller than that of an optical waveguide by 0.5-10%, where x and y are so set as to satisfy formulas, 0<=x and y<= Then, the light trapping layers 21-24 are prevented from increasing in light absorption coefficient, and the optical waveguide is lessened in loss. In an InP substrate 10, the light trapping layers 21-24 are the smallest in refractive index, and the refractive index of the layers 21-24 is smaller than that of the optical waveguide by 10% or less. The light trapping layers 21-24 are laminated, and in succession a P-InP clad layer 13 and a contact layer 14 are made to grow thereon. Then, an active layer 12 is surrounded with the light trapping layers 21-24 which vary gradually in refractive index, and an injection current is well injected into an active region. By this setup, an FFP element which can emit a light beam circular in cross section and is excellent in coupling efficiency can be obtained.
其他摘要	用途：使半导体器件发射圆形光束并通过提供组合物中规定的光捕获层的方法提高耦合效率，并且将所涉及的层的折射率设定为小于光学层的折射率波导0.5-10％。组成：光捕获层21-24由GaxIn1-xAsyP1-y形成，相关层的折射率设置为小于光波导的折射率0.5-10％，其中x和y设置为满足公式，0 <= x和y <= 1。然后，防止光捕获层21-24的光吸收系数增加，并且减少光波导的损耗。在InP衬底10中，光捕获层21-24的折射率最小，并且层21-24的折射率小于光波导的折射率10％或更小。层叠光捕获层21-24，并且依次使P-InP包覆层13和接触层14在其上生长。然后，有源层12被光捕获层21-24围绕，光折射层21-24的折射率逐渐变化，并且注入电流被良好地注入到有源区中。通过这种设置，可以获得能够发射横截面为圆形并且耦合效率优异的光束的FFP元件。
申请日期	1990-05-23
专利号	JP1992028283A
专利状态	失效
申请号	JP1990133614
公开（公告）号	JP1992028283A
IPC 分类号	G02B6/122 \| G02B6/12 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84107
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO LTD:THE
推荐引用方式 GB/T 7714	KASUKAWA AKIHIKO,OKAMOTO HIROSHI. Semiconductor device. JP1992028283A[P]. 1992-01-30.

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