Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of mask semiconductor laser | |
其他题名 | Manufacture of mask semiconductor laser |
IDE YASUSHI; HARIGAI MASATO; KOBAYASHI HIROSHI; MACHIDA HARUHIKO | |
1990-09-05 | |
专利权人 | RICOH CO LTD |
公开日期 | 1990-09-05 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To protect a mask by a protective film and to enhance a semiconductor laser in output by a method wherein a light prohibiting mask is formed on a light projecting face of the semiconductor laser, and a part of the mask is removed or made transparent to form a light projecting hole of a pinhole. CONSTITUTION:The light projecting face of a semiconductor laser 1 is coated with an SiN film of a thickness of lambda/2 as an insulating layer. lambda is the wavelength of laser rays of the laser In succession, an optical shielding mask 2 is formed on the insulating layer through a vacuum evaporation method. Then a protective film 3 is formed on the mask 2 through a vacuum evaporation method the same as above. The protective film 3 makes SiO serve as an evaporation material and is determined to have a thickness of D, where D satisfies a formula D=lambda/4n, and makes the reflectively of the output end face of the laser approximate to zero, and n denotes the refractive index of the protective film 3. In succession, a light projecting hole 4 is formed at a center. By this setup, the mask 2 is protected against oxidation and the semiconductor laser 1 can be increased in output by 40% or more as compared with a conventional one provided with no protective mask 3. |
其他摘要 | 用途:通过保护膜保护掩模并通过一种方法增强输出中的半导体激光器,其中在半导体激光器的光投射面上形成光禁止掩模,并且去除掩模的一部分或使其透明形成针孔的光突出孔。组成:半导体激光器1的光投射面涂有厚度为λ/ 2的SiN薄膜作为绝缘层。 λ是激光器1的激光射线的波长。接着,通过真空蒸发方法在绝缘层上形成光学屏蔽掩模2。然后通过与上述相同的真空蒸发方法在掩模2上形成保护膜3。保护膜3使SiO用作蒸发材料并且确定具有D的厚度,其中D满足公式D =λ/ 4n,并且使得激光器的输出端面的反射性接近零,并且n表示保护膜3的折射率。接着,在中心形成光投射孔4。通过这种设置,掩模2被保护免受氧化,并且与没有设置保护掩模3的传统半导体激光器相比,半导体激光器1的输出可以增加40%或更多。 |
申请日期 | 1989-02-23 |
专利号 | JP1990222587A |
专利状态 | 失效 |
申请号 | JP1989043898 |
公开(公告)号 | JP1990222587A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/84056 |
专题 | 半导体激光器专利数据库 |
作者单位 | RICOH CO LTD |
推荐引用方式 GB/T 7714 | IDE YASUSHI,HARIGAI MASATO,KOBAYASHI HIROSHI,et al. Manufacture of mask semiconductor laser. JP1990222587A[P]. 1990-09-05. |
条目包含的文件 | ||||||
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JP1990222587A.PDF(83KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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