Manufacture of mask semiconductor laser

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	Manufacture of mask semiconductor laser
其他题名	Manufacture of mask semiconductor laser
	IDE YASUSHI; HARIGAI MASATO; KOBAYASHI HIROSHI; MACHIDA HARUHIKO
	1990-09-05
专利权人	RICOH CO LTD
公开日期	1990-09-05
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To protect a mask by a protective film and to enhance a semiconductor laser in output by a method wherein a light prohibiting mask is formed on a light projecting face of the semiconductor laser, and a part of the mask is removed or made transparent to form a light projecting hole of a pinhole. CONSTITUTION:The light projecting face of a semiconductor laser 1 is coated with an SiN film of a thickness of lambda/2 as an insulating layer. lambda is the wavelength of laser rays of the laser In succession, an optical shielding mask 2 is formed on the insulating layer through a vacuum evaporation method. Then a protective film 3 is formed on the mask 2 through a vacuum evaporation method the same as above. The protective film 3 makes SiO serve as an evaporation material and is determined to have a thickness of D, where D satisfies a formula D=lambda/4n, and makes the reflectively of the output end face of the laser approximate to zero, and n denotes the refractive index of the protective film 3. In succession, a light projecting hole 4 is formed at a center. By this setup, the mask 2 is protected against oxidation and the semiconductor laser 1 can be increased in output by 40% or more as compared with a conventional one provided with no protective mask 3.
其他摘要	用途：通过保护膜保护掩模并通过一种方法增强输出中的半导体激光器，其中在半导体激光器的光投射面上形成光禁止掩模，并且去除掩模的一部分或使其透明形成针孔的光突出孔。组成：半导体激光器1的光投射面涂有厚度为λ/ 2的SiN薄膜作为绝缘层。 λ是激光器1的激光射线的波长。接着，通过真空蒸发方法在绝缘层上形成光学屏蔽掩模2。然后通过与上述相同的真空蒸发方法在掩模2上形成保护膜3。保护膜3使SiO用作蒸发材料并且确定具有D的厚度，其中D满足公式D =λ/ 4n，并且使得激光器的输出端面的反射性接近零，并且n表示保护膜3的折射率。接着，在中心形成光投射孔4。通过这种设置，掩模2被保护免受氧化，并且与没有设置保护掩模3的传统半导体激光器相比，半导体激光器1的输出可以增加40％或更多。
申请日期	1989-02-23
专利号	JP1990222587A
专利状态	失效
申请号	JP1989043898
公开（公告）号	JP1990222587A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84056
专题	半导体激光器专利数据库
作者单位	RICOH CO LTD
推荐引用方式 GB/T 7714	IDE YASUSHI,HARIGAI MASATO,KOBAYASHI HIROSHI,et al. Manufacture of mask semiconductor laser. JP1990222587A[P]. 1990-09-05.

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