Xi'an Institute of Optics and Precision Mechanics,CAS
| Semiconductor laser element | |
| 其他题名 | Semiconductor laser element |
| KONDO MASAFUMI; HAYAKAWA TOSHIRO; SUYAMA NAOHIRO; TAKAHASHI HISATOSHI | |
| 1989-04-26 | |
| 专利权人 | SHARP CORP |
| 公开日期 | 1989-04-26 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To obtain a semiconductor laser element with one successive MBE growth by providing a forward mesa section having a plane (n11) A (n>=1) formed on a substrate as an oblique surface, and using a group IV amphoteric element as a dopant for a growing layer to be stacked on an activated layer. CONSTITUTION:A layer 19 doped with a group IV amphoteric element comprises a forward mesa based on a forward mesa 17a with a plane (n11) A (n>=1) formed on a substrate 17 as an oblique surface. On the oblique surface 19a of the forward mesa, where adhesion coefficients of group V elements are small, and therefore, a IV group amphoteric element which normally behaves as a doper for a plane (100) infiltrates into a location of the group V element, whereby a first conduction type region 19b is formed. As a result, the first conduction type region 19b of a second conduction type layer 19 acts as a current constricting region. Further, a laser oscillating region 18a in an activated layer 18 is interposed also widthwise by the layer 19 into which the group V amphoteric element is doped, an index waveguide being formed. According to the constitution, a semiconductor laser element having current constriction and index waveguide mechanisms can easily be obtained by a MBE method. |
| 其他摘要 | 目的：通过提供具有在基板上形成的平面（n11）A（n> = 1）作为倾斜表面的前向台面部分，并使用IV族两性元件作为一个，获得具有一个连续MBE生长的半导体激光器元件。用于生长层的掺杂剂堆叠在活化层上。组成：掺杂有IV族两性元件的层19包括基于前台17a的前向台面，其中平面（n11）A（n> = 1）形成在基板17上作为倾斜表面。在前向台面的倾斜表面19a上，V族元素的附着系数小，因此，通常表现为平面（100）的作用的IV族两性元素渗透到V族元素的位置，由此形成第一导电类型区域19b。结果，第二导电型层19的第一导电型区域19b用作电流限制区域。此外，激活层18中的激光振荡区域18a也在其中在其中掺杂V族两性元件的层19在宽度方向上插入，形成折射率波导。根据该结构，通过MBE方法可以容易地获得具有电流收缩和折射率波导机构的半导体激光元件。 |
| 申请日期 | 1987-10-22 |
| 专利号 | JP1989109786A |
| 专利状态 | 失效 |
| 申请号 | JP1987267675 |
| 公开（公告）号 | JP1989109786A |
| IPC 分类号 | H01S5/00 | H01S5/223 | H01S5/30 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/83990 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KONDO MASAFUMI,HAYAKAWA TOSHIRO,SUYAMA NAOHIRO,et al. Semiconductor laser element. JP1989109786A[P]. 1989-04-26. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1989109786A.PDF（325KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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