Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor light emitting element | |
其他题名 | Semiconductor light emitting element |
KATSUI AKINORI; MATSUOKA TAKASHI | |
1990-11-30 | |
专利权人 | NIPPON TELEGR & TELEPH CORP |
公开日期 | 1990-11-30 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To manufacture a high efficient light emitting element by providing ZnSeSTe crystal layers deposited on an LiF single crystal substrate in lattice matching. CONSTITUTION:The title semiconductor light emitting element is provided with a semiconductor crystal layers comprising ZnSexSyTez (x+y+z=1 and 0<=x, y, z<=1) deposited on an LiF single crystal substrate in lattice alignment. The said element is composed of the LiF (100) substrate 1, a nitrogen doped p type ZnSe layer 2, an iodine doped n type ZnSe layer 3, an n type layered ohmic electrode 4, a p type layered ohmic electrode 5 while the whole ZnSe layer is a semiconductor layer epitaxially deposited on the substrate in lattice matching. Then, holes and electrons are implanted in a light emitting layer by impressing electrodes with positive and negative voltage and then blue colored emitted light in wavelength of around 460nm can be observed to assure the outer differential quantum efficiency of around 0.5%. Through these procedures, a large current can be impressed, thereby enabling the title element in high blue colored light emitting efficiency to be manufactured. |
其他摘要 | 目的:通过在LiF单晶衬底上提供沉积在晶格匹配中的ZnSeSTe晶体层来制造高效发光元件。组成:标题半导体发光元件具有半导体晶体层,该半导体晶体层包括以晶格排列方式沉积在LiF单晶衬底上的ZnSexSyTez(x + y + z = 1且0 <= x,y,z <= 1)。所述元素由LiF(100)衬底1,氮掺杂p型ZnSe层2,碘掺杂n型ZnSe层3,n型层状欧姆电极4,p型层状欧姆电极5和整个ZnSe组成。层是在晶格匹配中外延沉积在衬底上的半导体层。然后,通过施加具有正电压和负电压的电极将空穴和电子注入发光层中,然后可以观察到波长约为460nm的蓝色发射光,以确保外部差分量子效率为约0.5%。通过这些步骤,可以施加大电流,从而能够制造出高蓝色发光效率的标题元件。 |
申请日期 | 1989-05-01 |
专利号 | JP1990291183A |
专利状态 | 失效 |
申请号 | JP1989112468 |
公开(公告)号 | JP1990291183A |
IPC 分类号 | H01L33/28 | H01S5/00 | H01L33/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/83777 |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON TELEGR & TELEPH CORP |
推荐引用方式 GB/T 7714 | KATSUI AKINORI,MATSUOKA TAKASHI. Semiconductor light emitting element. JP1990291183A[P]. 1990-11-30. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1990291183A.PDF(300KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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