Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	OOISHI AKIO; KAYANE NAOKI
	1984-11-27
专利权人	HITACHI SEISAKUSHO KK
公开日期	1984-11-27
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable to reduce the noise of a semiconductor laser efficiently and stably by superposing a high frequency current on a semiconductor laser element having a structure that the transverse mode of said element is controlled mainly by the difference of refractive indices and further the carrier density of an N type enclosed layer at a specific value or less. CONSTITUTION:The titled device is provided with the semiconductor laser element 4 having the structure that the lateral mode of said element is controlled mainly by the difference of refractive indices and further the carrier density of the N type enclosed layer (so-called clad layer) at 7X10cm or less and with means 1-3 to superpose the high frequency current on said element 4. For example, the circuit is composed of a high frequency oscillator 1, a capacitor 2, a high frequency cut-off coil 3, said element 4 and a DC power source 5. When the frequency of the superposed high frequency current becomes over 400MHz, the effect of noise inhibition can be obtained, however, it is more effective at a frequency of 600MHz-800MHz.
其他摘要	用途：通过在半导体激光器元件上叠加高频电流，能够有效和稳定地降低半导体激光器的噪声，该半导体激光器元件具有主要由折射率差和载流子密度控制所述元件的横模的结构N型封闭层的特定值或更小的值。组成：标题设备提供半导体激光元件4，其结构是所述元件的横向模式主要由折射率的差异和N型封闭层（所谓的包层）的载流子密度控制在7×1017cm-3或更小的情况下，用装置1-3将高频电流叠加在所述元件4上。例如，该电路由高频振荡器1，电容器2，高频组成。截止线圈3，所述元件4和直流电源5.当叠加的高频电流的频率超过400MHz时，可以获得噪声抑制的效果，然而，它在600MHz的频率下更有效 - 800MHz的。
申请日期	1983-05-13
专利号	JP1984208883A
专利状态	失效
申请号	JP1983082660
公开（公告）号	JP1984208883A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83774
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	OOISHI AKIO,KAYANE NAOKI. Semiconductor laser device. JP1984208883A[P]. 1984-11-27.

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