Liquid-phase epitaxy apparatus

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	Liquid-phase epitaxy apparatus
其他题名	Liquid-phase epitaxy apparatus
	MOROSAWA KENICHI; NAKAMURA HITOSHI; OISHI AKIO; TSUJI SHINJI; MATSUMURA HIROYOSHI
	1987-07-28
专利权人	HITACHI LTD
公开日期	1987-07-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent the transformation of the surface of a substrate and the deterioration of dissipation of the structure of a diffraction grating, ridge and the like on the substrate due to heat, by controlling the temperatures of the substrate and a solution independently. CONSTITUTION:An outlet port 3 is so provided that a cooling gas can be made to flow directly to a substrate holder element of a growth boat, and only the vicinity of a substrate element is cooled down. An InP substrate having a diffraction grating is set in the substrate holder element, and it is heated to a prescribed temperature and kept thereat by heaters 13, while hydrogen is made to flow together with a substitution gas and the cooling gas. On the occasion, the flow rate (f) of the substitution gas at outlet ports 3 and 10 is set at 0.4l/min and 0.6l/min respectively. After a high temperature is kept for 1hr, the substitution gas at the outlet port 10 is turned to be 0l/min and the quantity of gas at the outlet port 03 to be zero. These conditions are maintained for 10min, and in this period the growth is implemented. While a solution for growth is kept at a high temperature, the substrate holder unit is cooled to prevent the structure on the substrate from being deteriorated or dissipated due to heat. The cooling of the substrate holder element is stopped just before the growth is executed, so that an entire system be put uniformly under a growth temperature. Thereby the growth can be implemented with the structure on the substrate preserved, without any effect on the growth.
其他摘要	目的：通过独立地控制基板和溶液的温度，防止基板表面的转变和由于热量导致的基板上的衍射光栅，脊等结构的耗散劣化。组成：提供一个出口3，使冷却气体可以直接流到生长船的基板支架元件，并只冷却基板元件附近。将具有衍射光栅的InP衬底设置在衬底保持元件中，并将其加热到规定温度并通过加热器13保持在那里，同时使氢气与置换气体和冷却气体一起流动。在这种情况下，出口3和10处的置换气体的流速（f）分别设定为0.4升/分钟和0.6升/分钟。在高温保持1小时后，出口10处的置换气体转为0升/分钟，出口03处的气体量为零。这些条件保持10分钟，并在此期间实现增长。在将生长溶液保持在高温的同时，冷却衬底保持器单元以防止衬底上的结构由于热而劣化或消散。在即将进行生长之前停止冷却衬底保持器元件，使得整个系统均匀地置于生长温度下。因此，可以在保持基板上的结构的情况下实现生长，而不会对生长产生任何影响。
申请日期	1986-01-24
专利号	JP1987171116A
专利状态	失效
申请号	JP1986011954
公开（公告）号	JP1987171116A
IPC 分类号	H01L21/208 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83701
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	MOROSAWA KENICHI,NAKAMURA HITOSHI,OISHI AKIO,et al. Liquid-phase epitaxy apparatus. JP1987171116A[P]. 1987-07-28.

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