Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	TSUNEKANE MASAKI
	1989-11-08
专利权人	NEC CORP
公开日期	1989-11-08
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To make a high-output operation possible and to enhance the reliability by a method wherein a second semiconductor layer whose refractive index is lower than that of a first semiconductor layer is formed on the first semiconductor layer in such a way that an active layer is sandwiched. CONSTITUTION:A second semiconductor layer 4 whose refractive index is lower than that of a first semiconductor layer 2 is formed on the first semiconductor layer 2, which has been formed on a semiconductor substrate 1 and contains a protruding light-waveguide shape formed to be flat by means of epitaxial growth by filling two or more sufficiently adjacent parallel grooves so as to couple light or by filling a groove having a region used to couple light in one part of the groove, in such a way that an active layer 3 is sandwiched. A peak of a distribution in the laminated direction of the light generated in the active layer 3 is situated inside the first semiconductor layer 2 whose refractive index is high. By this setup, it is possible to reduce a ratio of the light intensity at an end face of the active layer 3 to the total light radiated from an end face of a laser to about 10%; a high-output operation becomes possible; at the same time, the reliability at the high-output operation is enhanced.
其他摘要	用途：为了使高输出操作成为可能并通过一种方法提高可靠性，其中折射率低于第一半导体层的第二半导体层以这样的方式形成在第一半导体层上，即有源层被夹在中间。组成：在第一半导体层2上形成折射率低于第一半导体层2的第二半导体层4，第一半导体层2形成在半导体衬底1上并包含形成为扁平的突出光波导形状通过填充两个或多个充分相邻的平行凹槽以便通过外延生长来耦合光或者通过填充具有用于在凹槽的一部分中耦合光的区域的凹槽，使得有源层3被夹在中间。在有源层3中产生的光的层叠方向上的分布的峰值位于折射率高的第一半导体层2的内部。通过这种设置，可以减小有源层3的端面处的光强度与从激光器的端面辐射的总光的比率至约10％;高输出操作成为可能;同时，提高了高输出操作的可靠性。
申请日期	1988-04-28
专利号	JP1989278084A
专利状态	失效
申请号	JP1988108623
公开（公告）号	JP1989278084A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83688
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	TSUNEKANE MASAKI. Semiconductor laser device. JP1989278084A[P]. 1989-11-08.

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