Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	UKITA HIROO; KAWASHIMA SETSUKO; UENISHI YUJI; YAMAMOTO MANABU; KATAGIRI YOSHIMASA
	1987-12-18
专利权人	NIPPON TELEGR & TELEPH CORP
公开日期	1987-12-18
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To inhibit variation of output and optical feedback caused noise due to change of distance between an output end face of a laser and an optical recording medium and to improve the SN ratio of a detection signal, by arranging resonators periodically in the vertical direction to the optical axis while arranging the sections having a longer effective length of resonator and the sections having a shorter effective length of resonator in parallel with the optical axis. CONSTITUTION:A semiconductor laser comprises a lower clad layer 1, an active layer 2, an upper clad layer 3, a cap layer 25, an insulation layer 24 and electrodes 8 and 9 which are formed on a semiconductor substrate 0. The end face thereof 21 on the side of an optical component (optical recording medium) 10 is rugged, while the output end face 22 thereof is formed specularly by cleavage. The depth DELTAl of recesses in the rugged face is represented as DELTAl1=lambda(1+2N)/4neff and DELTAl2=lambda(1+2N)/4(neff-1), in which lambda is an oscillation wavelength and neff is an effective refractive index. The sum of reflected light from the output end face 21 and reflected light from the optical component 10 is cancelled, since in the semiconductor laser the going and returning optical paths have a difference of lambda/2 between the recessed and protruded sections. Accordingly, output is not varied even if the distance S is changed.
其他摘要	目的：为了抑制由于激光器的输出端面与光学记录介质之间的距离变化而引起的输出和光反馈引起的噪声的变化，并且通过在垂直方向上周期性地布置谐振器来提高检测信号的SN比同时将具有较长有效长度的谐振器的部分和具有较短有效长度的谐振器的部分布置成与光轴平行。结构：半导体激光器包括下覆层1，有源层2，上覆层3，覆盖层25，绝缘层24和形成在半导体衬底0上的电极8和9.其端面21在光学部件（光学记录介质）10的侧面上是凹凸不平的，而其输出端面22通过劈裂而镜面地形成。凹凸面中的凹陷的深度DELTA表示为DELTA11 =λ（1 + 2N）/ 4neff和DELTA12 =λ（1 + 2N）/ 4（neff-1），其中λ是振荡波长，neff是有效折射率。来自输出端面21的反射光和来自光学部件10的反射光的总和被消除，因为在半导体激光器中，前进和返回光路在凹进和突出部分之间具有λ/ 2的差。因此，即使距离S改变，输出也不变化。
申请日期	1986-06-12
专利号	JP1987291984A
专利状态	失效
申请号	JP1986134876
公开（公告）号	JP1987291984A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83657
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	UKITA HIROO,KAWASHIMA SETSUKO,UENISHI YUJI,et al. Semiconductor laser. JP1987291984A[P]. 1987-12-18.

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