Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser and manufacture thereof | |
其他题名 | Semiconductor laser and manufacture thereof |
NOGUCHI ETSUO; KONDOU SUSUMU; SUZUKI YOSHIO; NAGAI HARUO | |
1985-06-21 | |
专利权人 | NIPPON DENSHIN DENWA KOSHA |
公开日期 | 1985-06-21 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To enable the width of an active layer to be controlled easily, by reducing the height of a mesa structure in a hetero-junction including the active layer. CONSTITUTION:An N type InP substrate 1 is provided thereon with an N type InP crystal layer 2 as a lower clad layer, a GaInAsP quaternary mixed crystal layer 3 as an active layer and a P type InP crystal layer 4 as an upper clad layer, and this layered structure is subjected to mesa etching. A semi-insulating InP crystal layer 6 whose resistance is increased by doping Ni, Co or Fe is caused to grow, and then a P type region 8 is obtained by thermal diffusion of Zn or Cd or by ion implantation of Be or the like. Since formation of the mesa structure is substantially limited to the upper clad layer 4 and active layer 3, the required depth to be etched is very small while the width of the active layer can be controlled with precision. |
其他摘要 | 目的:通过降低包括有源层的异质结中台面结构的高度,可以轻松控制有源层的宽度。组成:N型InP衬底1上设有作为下包层的N型InP晶体层2,作为有源层的GaInAsP四元混合晶体层3和作为上部包层的P型InP晶体层4,并且对该层状结构进行台面蚀刻。通过掺杂Ni,Co或Fe来增加电阻的半绝缘InP晶体层6生长,然后通过Zn或Cd的热扩散或通过Be等的离子注入获得P型区域8。由于台面结构的形成基本上限于上包层4和有源层3,所以要蚀刻的所需深度非常小,而有源层的宽度可以精确地控制。 |
申请日期 | 1983-11-26 |
专利号 | JP1985115284A |
专利状态 | 失效 |
申请号 | JP1983222752 |
公开(公告)号 | JP1985115284A |
IPC 分类号 | H01S5/00 | H01S5/227 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/83587 |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON DENSHIN DENWA KOSHA |
推荐引用方式 GB/T 7714 | NOGUCHI ETSUO,KONDOU SUSUMU,SUZUKI YOSHIO,et al. Semiconductor laser and manufacture thereof. JP1985115284A[P]. 1985-06-21. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1985115284A.PDF(477KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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