Liquid-phase epitaxial growth equipment

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	Liquid-phase epitaxial growth equipment
其他题名	Liquid-phase epitaxial growth equipment
	KUBO MINORU; SASAI YOICHI; OGURA MOTOTSUGU; ISHINO MASATO
	1987-01-21
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1987-01-21
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To remove a damage of a substrate due to a thermal removal by saturating a substrate burying tank under partial pressure of an element which is thermally feasibly separated from the substrate as separated from solution. CONSTITUTION:A substrate 2 is mounted on the recess 3a of a substrate mounting carbon slide member 3, and a solution holder 7 having a growing solution 6 and a substrate burying through hole 6 (in a holder 4) is mounted thereon. A solution tank 8 is disposed on the holder 4, a solution 9 which contains In or Sn as a solvent and InP as a solute is provided in the tank, and a cover 10 is placed. The InP substrate is exposed with H2 atmosphere during the growing period, but since the P is evaporated at high temperature from the solution 9 of the tank 8 and sealed, the holder 4 is filled with the partial pressure of the P. Thus, the separation of the P from the substrate 2 is enabled to be compensated in a saturated state to remove a thermal damage.
其他摘要	用途：通过在元件的分压下使衬底掩埋槽饱和来消除由于热去除引起的衬底损坏，该元件与溶液分离时热可行地与衬底分离。组成：基板2安装在基板安装碳滑动构件3的凹槽3a上，并且具有生长溶液6和基板埋设通孔6（在支架4中）的溶液支架7安装在其上。溶液槽8设置在支架4上，在槽中设置含有In或Sn作为溶剂的溶液9和作为溶质的InP，并放置盖10。 InP衬底在生长期间暴露于H 2气氛，但由于P在高温下从罐8的溶液9中蒸发并密封，因此支架4充满了P的分压。因此，分离来自衬底2的P能够在饱和状态下被补偿，以消除热损伤。
申请日期	1985-07-11
专利号	JP1987013020A
专利状态	失效
申请号	JP1985152675
公开（公告）号	JP1987013020A
IPC 分类号	H01L21/208 \| H01L33/30 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83573
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	KUBO MINORU,SASAI YOICHI,OGURA MOTOTSUGU,et al. Liquid-phase epitaxial growth equipment. JP1987013020A[P]. 1987-01-21.

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