Semiconductor device

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor device
其他题名	Semiconductor device
	ISOZUMI SHIYOUJI
	1985-04-19
专利权人	FUJITSU KK
公开日期	1985-04-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve the deterioration of a semiconductor element and to improve the reliability by forming so that the difference of grating constant between the second semiconductor layer and the first semiconductor layer is smaller than that between the second semiconductor layer and a semiconductor substrate and that the energy gap of the first semiconductor layer is that or lower of the third semiconductor layer. CONSTITUTION:Since a Ga0.5Al0.5As crystal, a buffer layer 13 for forming a stripe groove 15 and the layer 13, In0.01Ga0.99As crystal of the layer 12 in a stripe groove 15 are equal in the grating constant, no stress concentration is generated, and since the thicknesses of the buffer layers 12, 13 are large and the thickness of a Ga0.84Al0.16As active layer 17 is small, the layer 17 and the stress near the layer are alleviated. Further, the energy gap of the In0.01Ga0.99As buffers 12, 13 are smaller than the layer 17 and sufficiently large light absorption out of the necessary stripe region is obtained to perform a lateral mode guide. Moreover, the N type layer 13 is contained in the In0.01Ga0.99As buffer layer, a P-N reverse junction is formed between the P type Ga0.5Al0.5As first clad layer 16 out of the stripe region to narrow the current.
其他摘要	目的：通过形成第二半导体层和第一半导体层之间的光栅常数差小于第二半导体层和半导体衬底之间的光栅常数差异来改善半导体元件的劣化并提高可靠性。第一半导体层的能隙是第三半导体层的能隙。组成：由于Ga0.5Al0.5As晶体，用于形成条纹沟槽15的缓冲层13和层13，条纹沟槽15中的层12的In0.01Ga0.99As晶体的光栅常数相等，没有应力产生浓度，并且由于缓冲层12,13的厚度大并且Ga0.84Al0.16As有源层17的厚度小，因此层17和层附近的应力得以减轻。此外，In0.01Ga0.99As缓冲层12,13的能隙小于层17，并且获得必要条纹区域的足够大的光吸收以执行横向模式引导。此外，N型层13包含在In0.01Ga0.99As缓冲层中，在条形区域外的P型Ga0.5Al0.5As第一包层16之间形成P-N反向结以使电流变窄。
申请日期	1983-09-26
专利号	JP1985068686A
专利状态	失效
申请号	JP1983177236
公开（公告）号	JP1985068686A
IPC 分类号	H01S5/00 \| H01S5/24 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83473
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	ISOZUMI SHIYOUJI. Semiconductor device. JP1985068686A[P]. 1985-04-19.

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