Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of semiconductor device | |
其他题名 | Manufacture of semiconductor device |
ONOUCHI TOSHIHIKO; NOJIRI HIDEAKI | |
1992-01-14 | |
专利权人 | CANON INC |
公开日期 | 1992-01-14 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To contrive a complete separation of a light from a current by a method wherein AlGaAS/GaAs-series semiconductors are laminated and an optical waveguide is formed by etching, after which a periphery of said waveguide is formed into a mesa form and is subjected to a burying re-growth by a liquid-phase growth. CONSTITUTION:Firstly on an N-type GaAs substrate 1, an N-type GaAs buffer layer 2, an N-type Al0.1Ga0.9As layer 3, an N-type Al0.45Ga0.55As clad layer 4, an undoped Al0.1Ga0.9As active layer 5, P-type Al0.45Ga0.55As clad layer 6 and a P-type GaAs cap layer 7 are laminated by MBE(Molecular Beam Epitaxy). Then, a photoresist 30 is patterned by photolithography and the etching down to the Al0.1Ga0.9As layer 3 is effected by RIBE(Reactive Ion Beam Etching) in order to form a waveguide structure. Next, after removing the photoresist 30, a liquid-phase growth is performed to grow an Al0.5Ga0.5As 9 of high resistance for 1min. and 10sec. at 800 deg.C. |
其他摘要 | 目的:通过一种方法设计光与电流的完全分离,其中层叠AlGaAS / GaAs系半导体并通过蚀刻形成光波导,之后所述波导的周边形成台面形状并经受通过液相生长来掩埋再生长。组成:首先在N型GaAs衬底1,N型GaAs缓冲层2,N型Al0.1Ga0.9As层3,N型Al0.45Ga0.55As包层4,未掺杂Al0。通过MBE(分子束外延)层叠1Ga0.9As有源层5,P型Al0.45Ga0.55As包层6和P型GaAs盖层7。然后,通过光刻将光致抗蚀剂30图案化,并且通过RIBE(反应离子束蚀刻)实现向下蚀刻到Al0.1Ga0.9As层3,以形成波导结构。接下来,在去除光致抗蚀剂30之后,进行液相生长以使高电阻的Al0.5Ga0.5As9生长1min。和10秒。在800摄氏度 |
申请日期 | 1990-04-26 |
专利号 | JP1992010485A |
专利状态 | 失效 |
申请号 | JP1990111353 |
公开(公告)号 | JP1992010485A |
IPC 分类号 | H01S5/00 | H01S5/026 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/83449 |
专题 | 半导体激光器专利数据库 |
作者单位 | CANON INC |
推荐引用方式 GB/T 7714 | ONOUCHI TOSHIHIKO,NOJIRI HIDEAKI. Manufacture of semiconductor device. JP1992010485A[P]. 1992-01-14. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1992010485A.PDF(376KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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