Manufacture of semiconductor light-emitting device

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	Manufacture of semiconductor light-emitting device
其他题名	Manufacture of semiconductor light-emitting device
	KATO TAKESHI
	1988-05-26
专利权人	FUJITSU LTD
公开日期	1988-05-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To complete the epitaxial growth of a semiconductor substrate having a good current stricture structure during a single growth process under the gentlest conditions by a method wherein the growth of a current stricture layer of the opposite conductivity type is permitted also on the upper edge of a mesa structure where a region is formed with the impurity concentration which is higher than that of the substrate and the conductivity type of the current stricture layer near the upper edge is reversed. CONSTITUTION:A mask 15 is formed on the surface of a substrate 1; a stripe-like mesa structure is formed by etching. After the mask 15 has been removed, the following layers are grown epitaxially in succession: an n-type InP current stricture layer 3 which is doped with tin (Sn) at a concentration of about 1X10 cm and is formed by, e.g., a liquid phase epitaxial growth method to be a thickness of about 0.2 mum on the mesa; a p-type InP confining layer 4 which is doped with, e.g., cadmium (Cd) at a concentration of about 1X10 cm and is formed to be a thickness of about 5 mm on the mesa; an undoped InGaAsP active layer 5 which is formed to be a thickness of about 0.15 mum on the mesa; an n-type InP confining layer 6; an n-type InP contact layer 7. This semiconductor substrate is heat-treated; impurities of a p type region are diffused; a p-type reversed region 8 which results from ion of the n-type InP current stricture layer 3 near the upper edge into a p-type is formed.
其他摘要	用途：在最温和的条件下，在单一生长过程中通过一种方法完成具有良好电流狭窄结构的半导体衬底的外延生长，其中允许相反导电类型的电流狭窄层的生长也在上边缘上生长。在台面结构中形成的区域的杂质浓度高于基板的杂质浓度，并且上边缘附近的电流狭窄层的导电类型反转。组成：在基板1的表面上形成掩模15;通过蚀刻形成条状台面结构。在去除掩模15之后，依次外延生长以下层：n型InP电流狭窄第3层掺杂有浓度约为1×10 18 cm -3的锡（Sn），并通过例如液相外延生长方法在台面上形成厚度约为0.2μm的层; p型InP限制层4，其掺杂有例如浓度约为1×1018cm-3的镉（Cd），并在台面上形成约5mm的厚度;未掺杂的InGaAsP有源层5，在台面上形成约0.15μm的厚度; n型InP约束层6; n型InP接触层7.对该半导体衬底进行热处理; p +型区域的杂质扩散; p型反转区域8是由上边缘附近的n型InP电流狭窄层3的离子形成p型而形成的。形成。
申请日期	1986-11-11
专利号	JP1988122190A
专利状态	失效
申请号	JP1986268068
公开（公告）号	JP1988122190A
IPC 分类号	H01L33/14 \| H01L33/30 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83426
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KATO TAKESHI. Manufacture of semiconductor light-emitting device. JP1988122190A[P]. 1988-05-26.

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