Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	OBE ISAO; TODOROKI SATORU
	1987-11-06
专利权人	HITACHI LTD
公开日期	1987-11-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable reducing an astigmatic difference by increasing the reflectivity of laser light on the curved wave surface of a fundamentally horizontal transverse mode and by reducing the above-mentioned reflectivity in a region where the fundamentally horizontal transverse mode is near a plane wave. CONSTITUTION:An n-GaAs semiconductor block layer 2 is formed on a p-GaAs semiconductor substrate 1 except a channel region, then a clad layer 3 which is a p-GaAlAs semiconductor optical confinement layer, an (n) or (p) or undope GaAlAs semiconductor active layer 4, a clad layer 5 which is an n-GaAlAs semiconductor optical confinement layer and an n-GaAs semiconductor cap layer 6 are formed in sequence by a well known method and at last, an electrode 7 is provided on the face of the n-GaAs semiconductor cap layer 6 and on the rear of the p-GaAs semiconductor substrate 1 each by evaporation. In this case, the thickness of the semiconductor clad layer 3 is made 0.4mum to cause pulsation. The size of a light emitting region 10 provided on a protection film 9 is made equal to or less than the width of a channel in the horizontal direction for junction and at least equal to or more than the thickness of the semiconductor active layer 4 in the vertical direction for junction and the center of the light emitting region 10 is set to a position where laser light intensity is made maximum.
其他摘要	目的：通过增加激光在基本水平横模的曲面波面上的反射率，并通过在基本水平横模接近平面波的区域内减少上述反射率，减少像散差。组成：除了沟道区域之外，在p-GaAs半导体衬底1上形成n-GaAs半导体阻挡层2，然后是作为p-GaAlAs半导体光学限制层的包层3，（n）或（p）或通过众所周知的方法依次形成未开口的GaAlAs半导体有源层4，作为n-GaAlAs半导体光学限制层的包层5和n-GaAs半导体盖层6，最后，在该层上设置电极7。通过蒸发，在n-GaAs半导体盖层6的表面和p-GaAs半导体衬底1的后面。在这种情况下，使半导体包层3的厚度为0.4μm以引起脉动。设置在保护膜9上的发光区域10的尺寸等于或小于用于结的水平方向上的沟道的宽度，并且至少等于或大于半导体有源层4的厚度。结的垂直方向和发光区域10的中心设置在激光强度最大的位置。
申请日期	1986-04-28
专利号	JP1987254480A
专利状态	失效
申请号	JP1986096724
公开（公告）号	JP1987254480A
IPC 分类号	H01S5/00 \| H01S5/065 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83416
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	OBE ISAO,TODOROKI SATORU. Semiconductor laser device. JP1987254480A[P]. 1987-11-06.

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