Manufacture of semiconductor device

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	Manufacture of semiconductor device
其他题名	Manufacture of semiconductor device
	TANAHASHI TOSHIYUKI
	1991-10-01
专利权人	FUJITSU LTD
公开日期	1991-10-01
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To protect a diffraction grating against deformation caused by a thermal treatment process by a method wherein an AlP crystal layer is formed on an AlGaInP crystal layer provided onto a semiconductor substrate, grooves are selectively provided so deep as to reach to the AlGaInP crystal to form a diffraction grating. CONSTITUTION:A P-type AlGaInP guide layer 4 is formed, for instance, as thick as 0.1mum or so, and a P-type AlP deformation preventing thin film 5 is formed, for instance, as thick as 50Angstrom or so through an MOVPE method. A resist film 6 is formed in stripes at a regular interval of 2700Angstrom through a photolithography technique. A partial chemical etching is carried out using the resist film 6 as a mask. The resist film 6 is adequately set in pitch of stripes and etching depth so as to form a diffraction grating 7 possessed of optional period and depth. Therefore, as a diffraction grating has a deformation preventive thin film at its top, it can be prevented from being deformed even if a second clad layer 8 is formed on its top through an MOVPE method, because an AlP crystal is hardly dissociated in a heat treatment as atoms of a III and a V group are strongly combined together in it.
其他摘要	用途：为了保护衍射光栅免受热处理工艺引起的变形的影响，其中AlP晶体层形成在设置在半导体衬底上的AlGaInP晶体层上，选择性地设置沟槽，使得沟槽达到AlGaInP晶体的深度。形成衍射光栅。组成：P型AlGaInP引导层4，例如，厚达0.1μm左右，并形成P型AlP变形防止薄膜5，例如，通过MOVPE厚达50埃左右方法。通过光刻技术以2700埃的规则间隔以条纹形成抗蚀剂膜6。使用抗蚀剂膜6作为掩模进行部分化学蚀刻。抗蚀剂膜6适当地设定条纹间距和蚀刻深度，以形成具有任选周期和深度的衍射光栅7。因此，由于衍射光栅在其顶部具有防变形薄膜，所以即使在其顶部通过MOVPE方法形成第二包层8也可以防止其变形，因为AlP晶体在热量下几乎不会离解作为III和V族原子的处理在其中强烈结合在一起。
申请日期	1990-01-26
专利号	JP1991222386A
专利状态	失效
申请号	JP1990017001
公开（公告）号	JP1991222386A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83395
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	TANAHASHI TOSHIYUKI. Manufacture of semiconductor device. JP1991222386A[P]. 1991-10-01.

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