Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor light-emitting device | |
其他题名 | Semiconductor light-emitting device |
YOKOTSUKA, TATSUO; TAKAMORI, AKIRA | |
1992-06-23 | |
专利权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
公开日期 | 1992-06-23 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A semiconductor light-emitting device comprising a substrate formed of GaAs, a cladding layer formed of (AlxGa1-x)yIn1-yP and an active layer formed of GayIn1-yP (0.5=y=1) or GayIn1-yP (0=y=0.5), said cladding layer having its composition represented by (AlxGa1-x)0.5In0.5P ((0=x=1), lattice-matched to said GaAs substrate, and said cladding layer having a band-gap size made larger by at least 0.25 eV than said active layer. The device can attain an oscillation wavelength of 0.67 mu m or less or from 0.68 mu m to 0.78 mu m. |
其他摘要 | 一种半导体发光器件,包括由GaAs形成的衬底,由(AlxGa1-x)yIn1-yP形成的包层和由GayIn1-yP(0.5 = = 1)或GayIn1-yP形成的有源层(0 = y = 0.5),所述包层的组成由(Al x Ga 1-x)0.5 In0.5P((0 = x = 1)表示,与所述GaAs基板晶格匹配,所述包层的带隙尺寸比所述有源层大至少0.25eV。该装置可以获得0.67μm或更小的振荡波长或0.68μm至0.78μm的振荡波长。 |
申请日期 | 1991-03-12 |
专利号 | US5124995 |
专利状态 | 失效 |
申请号 | US07/667989 |
公开(公告)号 | US5124995 |
IPC 分类号 | H01S5/343 | H01S5/323 | H01S5/00 | H01S5/32 | H01S3/19 |
专利代理人 | - |
代理机构 | LOWE,PRICE,LEBLANC & BECKER |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/83316 |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
推荐引用方式 GB/T 7714 | YOKOTSUKA, TATSUO,TAKAMORI, AKIRA. Semiconductor light-emitting device. US5124995[P]. 1992-06-23. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US5124995.PDF(758KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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