Distributed feedback type semiconductor laser

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	Distributed feedback type semiconductor laser
其他题名	Distributed feedback type semiconductor laser
	UOMI KAZUHISA; OKAI MAKOTO; SAKANO SHINJI; TSUJI SHINJI; KAYANE NAOKI
	1989-07-27
专利权人	HITACHI LTD
公开日期	1989-07-27
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To facilitate the realization of a stable vertical single mode even if the coupling of a phase shift diffraction lattice is large by a method wherein an electrode through which a current can be introduced into the active layer of a region including the diffraction lattice independently from the active layers of the other regions is provided. CONSTITUTION:After a diffraction lattice 2 whose phase is shifted by pi/2 near the center part is formed on an n-type semiconductor substrate 1, an n-type light guide layer 4 which has a smaller forbidden band width than the substrate 1, an active layer 5 which has a smaller forbidden band width than the layer 4 and a p-type cladding layer 6 which has a larger fobidden band width than the layer 4 are successively built up. A phase shift region injection electrode 7, a main injection electrode 8 and an n-type side electrode 9 are formed on the surface side corresponding to the neighborhood of the phase shift region 3. If the density of the current injected into the electrode 7 is about 1-4 times the density of the current injected into the main injection electrode 8, the decrease of the carrier density near the phase shift position can be suppressed and the carrier density can be uniform along a resonator direction so that, even a phase-shift type distributed feedback semiconductor laser in which coupling between the diffraction lattice and a laser beam is large is employed, a stable vertical single mode can be realized.
其他摘要	目的：即使相移衍射晶格的耦合很大，也可以通过一种方法实现稳定的垂直单模，即通过这种方法可以将电流引入包括衍射晶格的区域的有源层的电极独立于提供其他区域的有源层。组成：在n型半导体基板1上形成相位在中心部分附近偏移pi / 2的衍射晶格2，n型导光层4的禁带宽度小于基板1的禁带宽度，具有比层4更小的禁带宽度的有源层5和具有比其更大的带宽宽度的p型包层6第4层相继建立起来。相移区域注入电极7，主注入电极8和n型侧电极9形成在与相移区域3的邻域相对应的表面侧上。如果注入电极7的电流密度是注入主注入电极8的电流密度约为1-4倍，可以抑制相移位置附近的载流子密度的降低，并且沿谐振器方向的载流子密度可以是均匀的，因此即使是相位 - 采用衍射型分布反馈半导体激光器，其中衍射晶格和激光束之间的耦合很大，可以得到稳定的垂直单模实现。
申请日期	1988-01-22
专利号	JP1989187889A
专利状态	失效
申请号	JP1988010625
公开（公告）号	JP1989187889A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83279
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	UOMI KAZUHISA,OKAI MAKOTO,SAKANO SHINJI,et al. Distributed feedback type semiconductor laser. JP1989187889A[P]. 1989-07-27.

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