Semiconductor device

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor device
其他题名	Semiconductor device
	KASUKAWA AKIHIKO
	1987-06-29
专利权人	FURUKAWA ELECTRIC CO LTD:THE
公开日期	1987-06-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To readily assemble and process elements of flattening and die bonding of the surface of a current blocking layer by providing a clad layer of the same conductivity type as a substrate, an active layer, a clad layer of opposite conductivity type to the substrate sequentially laminated on a main flat surface including a random superlattice layer and a superlattice layer. CONSTITUTION:An N-type Ga1-xAlxAs/Ga1-x'Alx'As superlattice layer 22 is formed in a depth of 1mum from a main surface on a predetermined region of an N-type GaAs substrate 21 at a main surface side. This layer 22 has a structure that barrier layers 22a (Se-doped) of 70Angstrom thick and well layers 22b (Se-doped) of 30Angstrom thick are laminated for 100 periods. A Zn-doped random superlattice layer 23 is formed at a predetermined region of the substrate 2 The main surface of the substrate 21 including the layers 23, 22 becomes flat. An optical guide layer made of an N-type GaAlAs clad layer 24, a non-doped GaA As active layer 25, a P-type GaAlAs clad layer 26 and a P-type GaAs contact layer 27 are sequentially laminated on the flat main surface. Metal electrodes 28, 29 are formed on the layer 27 and the substrate 21, respectively. A semiconductor laser 30 becomes a refractive index guide type laser structure having a current blocking layer therein at the substrate 21 side to realize a low threshold current and a stable lateral mode operation.
其他摘要	用途：通过提供与基板相同导电类型的包层，有源层，与基板相反导电类型的包层，容易地组装和加工电流阻挡层表面的平坦化和芯片键合元件层压在包括随机超晶格层和超晶格层的主平坦表面上。组成：N型Ga1-xAlxAs / Ga1-x'Alx'As超晶格层22形成在距离主表面侧的N型GaAs衬底21的预定区域上的主表面1μm的深度。该层22具有这样的结构：70埃厚的阻挡层22a（Se掺杂）和30埃厚的阱层22b（Se掺杂）层叠100个周期。在基板21的预定区域处形成掺杂Zn的随机超晶格层23.包括层23,22的基板21的主表面变平。由N型GaAlAs包层24，非掺杂GaAs As有源层25，P型GaAlAs包层26和P型GaAs接触层27制成的光导层依次层叠在平坦的主表面上。金属电极28,29分别形成在层27和基板21上。半导体激光器30成为折射率引导型激光器结构，其在基板21侧具有电流阻挡层，以实现低阈值电流和稳定的横向模式操作。
申请日期	1985-12-20
专利号	JP1987145793A
专利状态	失效
申请号	JP1985285762
公开（公告）号	JP1987145793A
IPC 分类号	H01S5/00 \| H01S5/20 \| H01S5/32 \| H01S5/343 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83264
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO LTD:THE
推荐引用方式 GB/T 7714	KASUKAWA AKIHIKO. Semiconductor device. JP1987145793A[P]. 1987-06-29.

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