Xi'an Institute of Optics and Precision Mechanics,CAS
| Semiconductor laser device | |
| 其他题名 | Semiconductor laser device |
| KONDO MASAFUMI; SASAKI KAZUAKI; SUYAMA NAOHIRO; TAKAHASHI KOUSEI; HOSODA MASAHIRO; HAYAKAWA TOSHIRO | |
| 1990-06-12 | |
| 专利权人 | SHARP CORP |
| 公开日期 | 1990-06-12 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To provide a semiconductor laser device for an optical disk system with reduced astigmatism and with satisfactory return light noise characteristics by reducing the thickness of a second cladding layer at opposite sides of a ridge region move than that in a resonator, in the vicinity of the exit end surface of the laser light. CONSTITUTION:A ridge wavelength type semiconductor laser device includes, on an n-GaAs substrate 1, an n-GaAs buffer layer 2, an n-Al0.5Ga0.5As first cladding layer 3, an undoped AlxGa1-xAs GRIN layer 4, an undoped multiple quantum well active layer 5, an undoped AlyGa1-yAs GRIN layer 6, a p-Al0.5Ga0.5 As second cladding layer 7 (1mum thick), and a p-GaAs contact layer 8, all being grown by a MBE process. The thickness of the second cladding layer 7 on opposite sides of the ridge region is selected to be 0.4mum for example. Further, the thickness of the second cladding layer 7 on opposite sides of the ridge region located within 100mum from the laser light exit end surface is selected to be 0.2mum for example. The resulting semiconductor laser device is excellent in optical output, return light amount, and relative noise intensity, and is reduced in astigmatism. |
| 其他摘要 | 目的：通过减小脊区域相对侧的第二包层的厚度，使其具有减少的像散和令人满意的返回光噪声特性的光盘系统的半导体激光器件移动，而不是在谐振器中，激光的出射端面。组成：脊形波长型半导体激光器件，在n-GaAs衬底1上，包括n-GaAs缓冲层2，n-Al0.5Ga0.5As第一包层3，未掺杂的AlxGa1-xAs GRIN层4，未掺杂的多量子阱有源层5，未掺杂的AlyGa1-yAs GRIN层6，p-Al0.5Ga0.5作为第二包层7（1μm厚）和p-GaAs接触层8，全部由MBE生长处理。在脊区域的相对侧上的第二包层7的厚度选择为例如0.4μm。此外，位于距激光出射端面100μm以内的脊区域的相对侧上的第二覆层7的厚度选择为例如0.2μm。所得到的半导体激光装置的光输出，返回光量和相对噪声强度优异，并且散光减少。 |
| 申请日期 | 1988-12-05 |
| 专利号 | JP1990152292A |
| 专利状态 | 失效 |
| 申请号 | JP1988307110 |
| 公开（公告）号 | JP1990152292A |
| IPC 分类号 | H01S5/00 | H01S5/042 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/82975 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KONDO MASAFUMI,SASAKI KAZUAKI,SUYAMA NAOHIRO,et al. Semiconductor laser device. JP1990152292A[P]. 1990-06-12. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1990152292A.PDF（515KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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