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OPT OpenIR > 半导体激光器专利数据库

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其他题名	-
	IWASAKI TAMOTSU
	1993-11-22
专利权人	FURUKAWA ELECTRIC CO LTD
公开日期	1993-11-22
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To facilitate highly-reliable output operations and highly-efficient and stable oscillations by a construction wherein a plurality of active layers are formed in a multilayer structure and the reflecting surface of a resonator is formed of a solid-phase reaction product of a group III element or/and a group V element and a metal which reacts with either or both of said elements to produce a compound having a chemical equivalent composition. CONSTITUTION:A multilayer laminate structure 29 of three active layers 23, 25 and 27 is formed on a semi-insulating substrate 21, and an N type region 32 and P type region 35 being separate electrically from each other are provided in an area ranging from a surface clad layer 28 to the surface of an intermediate clad layer 22. Moreover, solid-phase reaction products 48a and 48b produced in reaction with a group III element or/and a group V element are provided on interfaces between the surface clad layer 28 exposed out of a window 37 of an SiO2 film 33 and a Pt film pattern 39, for instance, while a positive electrode 40 of Pt and a negative electrode 44 of Au-Ge-Ni, which are in ohmic connection with the P type region 35 and the N type region 32 respectively, are provided. By this constitution, an oscillation wavelength can be controlled by a process time, the thickness of an evaporated Pt film and a process temperature, and an oscillation output is improved owing to the three-layer structure of the active layers.
其他摘要	用途：通过一种结构促进高度可靠的输出操作和高效稳定的振荡，其中多层有源层形成多层结构，谐振器的反射表面由一组固相反应产物形成III族元素或/和V族元素和与所述元素中的任一种或两种反应的金属，以产生具有化学当量组成的化合物。组成：三个有源层23,25和27的多层层叠结构29形成在半绝缘基板21上，并且N +型区域32和P +型区域35彼此电分离是设置在从表面包层28到表面包层28的区域中此外，与III族元素或/和V族元素反应产生的固相反应产物48a和48b设置在暴露在窗口37之外的表面包层28之间的界面上。例如，SiO 2膜33和Pt膜图案39，Pt的正电极40和Au-Ge-Ni的负电极44，其与P +型区域35和N欧姆连接分别提供类型区域32。通过这种结构，可以通过处理时间，蒸发的Pt膜的厚度和处理温度来控制振荡波长，并且由于活性物质的三层结构而改善了振荡输出。层。
申请日期	1985-01-29
专利号	JP1993082758B2
专利状态	失效
申请号	JP1985014692
公开（公告）号	JP1993082758B2
IPC 分类号	H01S \| H01S5/062 \| H01S5/042 \| H01S5/00 \| H01S5/183 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/82873
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO LTD
推荐引用方式 GB/T 7714	IWASAKI TAMOTSU. -. JP1993082758B2[P]. 1993-11-22.

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JP1993082758B2.PDF（653KB）	专利		开放获取	CC BY-NC-SA	请求全文