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OPT OpenIR > 半导体激光器专利数据库

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其他题名	-
	ISHIDA JUJI; FUKADA HAYAMIZU; TANAKA HARUO; NAKADA NAOTARO
	1993-03-17
专利权人	ROHM KK
公开日期	1993-03-17
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To inhibit the deformation of a striped groove at a minimum by laminating a P-type GaAs protective layer set in film thickness, in which the evaporation of an exposed section in a current stopping layer is suppressed minimally, in a first growth process in a thermal cleaning process. CONSTITUTION:The film thickness of a protective layer 24 is formed in size, in which the evaporation of an exposed section 25' in a current stopping layer 25 is inhibited at a minimum in a thermal cleaning process as a post-process, and set in approximately 50-500Angstrom . A substrate 10 using a photo-resist 50 as a mask is dipped into a solution 60 having an etching rate of N>>P under beam irradiation from a light source such as a halogen lamp, and an evapora tion stopping layer 26 and the current stopping layer 25 are etched selectively to a striped shape along a laser resonator wavelength. The substrate 10 is heated at approximately 720 deg.C or higher while the substrate 10 is irradiated by arsenic molecular beams in a MBE device, thus evaporating impurities such as an oxide adhering in an etching process and the protective layer 24, the surface thereof is exposed to a striped shape. Accordingly, a striped groove 30 in depth reaching a first upper clad layer 23 is formed.
其他摘要	目的：通过层压薄膜厚度的P型GaAs保护层来抑制条纹凹槽的变形，其中电流停止层中的暴露部分的蒸发被最小程度地抑制，在第一个生长过程中，热清洗过程。组成：保护层24的薄膜厚度形成的大小，其中在作为后处理的热清洁过程中，电流停止层25中的暴露部分25'的蒸发被抑制到最小，并且设置在大约50-500Angstrom。使用光致抗蚀剂50作为掩模的基板10在从诸如卤素灯的光源和蒸发停止层26和电流的光束照射下浸入具有N >> P的蚀刻速率的溶液60中。停止层25沿激光谐振器波长选择性地蚀刻成条纹形状。在MBE器件中用砷分子束照射衬底10时，衬底10被加热到大约720℃或更高，从而蒸发诸如在蚀刻工艺中粘附的氧化物和保护层24之类的杂质，其表面是暴露在条纹状。因此，形成深度达到第一上包层23的条纹槽30。
申请日期	1985-01-17
专利号	JP1993019837B2
专利状态	失效
申请号	JP1985007255
公开（公告）号	JP1993019837B2
IPC 分类号	H01S \| H01L \| H01L21/308 \| H01L21/208 \| H01L21/306 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/82829
专题	半导体激光器专利数据库
作者单位	ROHM KK
推荐引用方式 GB/T 7714	ISHIDA JUJI,FUKADA HAYAMIZU,TANAKA HARUO,et al. -. JP1993019837B2[P]. 1993-03-17.

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