Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
OOTA YOICHIRO; TANAKA TOSHIO; TAKAMIYA SABURO | |
1987-10-08 | |
专利权人 | MITSUBISHI ELECTRIC CORP |
公开日期 | 1987-10-08 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To prevent deterioration of each required layer, such as oxidation. during the manufacturing of a laser device, by providing an etching control layer, etching a current blocking layer, removing the etching control layer, and forming a stripe shaped groove. CONSTITUTION:On a P-type GaAs substrate 1, an AlxGa1-xAs etching control layer 2 and an N-type GaAs current blocking layer 3 are sequentially grown by using an MO-CVD method. By using an etching mask 11, only the N-type GaAs current blocking layer 3 is etched with a selective etching liquid, by which GaAs is etched farther than AlGaAs. Thus a groove is formed. The mask 11 is removed. The etching control layer 2, which is exposed at the bottom part of the groove is removed by using an appropriate etching liquid. The chemically stable GaAs substrate 1 is exposed at the bottom part of the groove. Thus a stripe shaped groove 10 is formed. Required layers 4, 5, 6 and 7 are epitaxially grown by using the MO-CVD method. |
其他摘要 | 用途:防止每个所需层的变质,如氧化。在制造激光器件期间,通过提供蚀刻控制层,蚀刻电流阻挡层,去除蚀刻控制层,以及形成条形槽。组成:在P型GaAs衬底1上,通过使用MO-CVD方法依次生长AlxGa1-xAs蚀刻控制层2和N型GaAs电流阻挡层3。通过使用蚀刻掩模11,仅用选择性蚀刻液蚀刻N型GaAs电流阻挡层3,由此GaAs被蚀刻得比AlGaAs更远。因此形成凹槽。去除掩模11。通过使用适当的蚀刻液去除在凹槽的底部暴露的蚀刻控制层2。化学稳定的GaAs衬底1暴露在凹槽的底部。因此形成条形凹槽10。通过使用MO-CVD方法外延生长所需的层4,5,6和7。 |
申请日期 | 1986-03-11 |
专利号 | JP1987229893A |
专利状态 | 失效 |
申请号 | JP1986054302 |
公开(公告)号 | JP1987229893A |
IPC 分类号 | H01S5/00 | H01L21/306 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/82089 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | OOTA YOICHIRO,TANAKA TOSHIO,TAKAMIYA SABURO. Semiconductor laser device. JP1987229893A[P]. 1987-10-08. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1987229893A.PDF(310KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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