Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	KASAI SHUSUKE; TAKIGUCHI HARUHISA; MORIMOTO TAIJI; KANEIWA SHINJI; HAYASHI HIROSHI
	1989-04-19
专利权人	SHARP CORP
公开日期	1989-04-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser device which can reduce light density at the end surface, and decrease oscillation threshold current, by making the reflectivity of a light guide layer part of a light emitting side end surface lower than those of the active layer part of the light emitting side end surface, the active layer part of the rear end surface, and the light guide layer part of the rear end surface. CONSTITUTION:A laser emitting end surface is coated with an Al2O3 film having a thickness of quarter wavelength, and a transmission film 11 whose transmittance is 1% is formed. A rear end surface is coated with an Al2O3/amorphous Si multilayer, to form a high reflective film 12. On the laser emitting end surface, an aluminum film is vapor-deposited to form an aluminum high reflective film 13. In this laser, both end surfaces of a resonator of the active layer part, and the rear end surface of the light guide layer are high reflective films and the light density at the end surfaces decreases as compared with usual cases. At the light emitting end surface side of the light guide layer, the light density increases, but the increase is relieved because the light guide layer is comparatively thin. Therefore end surface destruction level can be increased.
其他摘要	目的：通过使发光侧端面的导光层部分的反射率低于有源层部分的反射率，获得能够降低端面光密度并降低振荡阈值电流的半导体激光器件。发光侧端面，后端表面的有源层部分和后端表面的导光层部分。组成：激光发射端面涂有厚度为四分之一波长的Al2O3薄膜，并形成透射率为1％的透射薄膜11。后端表面涂有Al2O3 /非晶硅多层，以形成高反射膜12.在激光发射端面上，气相沉积铝膜以形成铝高反射膜13.在该激光器中，两者都是有源层部分的谐振器的端面和光导层的后端表面是高反射膜，并且与通常情况相比，端面处的光密度减小。在光导层的光发射端面侧，光密度增加，但是由于光导层相对较薄，所以增加了增加。因此，可以增加端面破坏水平。
申请日期	1987-10-13
专利号	JP1989100988A
专利状态	失效
申请号	JP1987258860
公开（公告）号	JP1989100988A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/81939
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	KASAI SHUSUKE,TAKIGUCHI HARUHISA,MORIMOTO TAIJI,et al. Semiconductor laser device. JP1989100988A[P]. 1989-04-19.

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