Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
HASEGAWA MITSUTOSHI; HARA TOSHITAMI; NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; MIYAZAWA SEIICHI | |
1987-11-20 | |
专利权人 | CANON INC |
公开日期 | 1987-11-20 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To eliminate an error on positioning and the limitation of integration density by making each optical outgoing direction differ at a point of time when beams from a semiconductor laser are emitted from resonance surfaces, forming one of each resonance surface by cleavage and shaping the other by etching. CONSTITUTION:An N-type GaAs layer 4, an N-type AlGaAs layer 7, a non- doped GaAs layer 8, a P-type AlGaAs layer 9 and a P-type GaAs layer 10 are grown on an N-type GaAs substrate 5 in succession, the whole surface is coated with an silicon nitride plasma CVD film, and current injection regions 11a-11c and photodetector 2a-2c sections are removed through etching, and covered with Cr and Au laminated electrodes 11, 12. The electrodes 11, 12 isolate each laser 1a-1c or the photodetector 2a-2c sections so as to be able to independently drive them. An alloy electrode 13 consisting of Au and Ge is shaped onto the back, the surface is processed vertically in a Cl2 gas atmosphere, and a groove 14 and resonator surfaces 15 are formed, and isolated by cleavage or cutting at every unit. Accordingly, semiconductor emitters and the photodetectors are easily integrated, thus stabilizing an optical output. |
其他摘要 | 目的:通过使来自半导体激光器的光束从共振表面发射,通过解理形成每个共振表面中的一个并使另一个共振表面成形,使每个光学输出方向在时间点上不同,从而消除定位误差和积分密度的限制。通过蚀刻。组成:在N型GaAs基板上生长N型GaAs层4,N型AlGaAs层7,非掺杂GaAs层8,P型AlGaAs层9和P型GaAs层10接下来,如图5所示,在整个表面上涂覆氮化硅等离子体CVD膜,并通过蚀刻去除电流注入区域11a-11c和光电检测器2a-2c部分,并用Cr和Au层叠电极11,12覆盖。电极11 12,隔离每个激光器1a-1c或光电探测器2a-2c部分,以便能够独立地驱动它们。由Au和Ge组成的合金电极13成形在背面上,表面在Cl2气体气氛中垂直处理,并形成凹槽14和谐振器表面15,并通过在每个单元处的解理或切割来隔离。因此,半导体发射器和光电探测器易于集成,从而稳定光输出。 |
申请日期 | 1986-05-16 |
专利号 | JP1987268175A |
专利状态 | 失效 |
申请号 | JP1986112054 |
公开(公告)号 | JP1987268175A |
IPC 分类号 | H01S5/00 | H01S5/026 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/81931 |
专题 | 半导体激光器专利数据库 |
作者单位 | CANON INC |
推荐引用方式 GB/T 7714 | HASEGAWA MITSUTOSHI,HARA TOSHITAMI,NOJIRI HIDEAKI,et al. Semiconductor laser device. JP1987268175A[P]. 1987-11-20. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1987268175A.PDF(267KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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