Semiconductor luminescent device

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	Semiconductor luminescent device
其他题名	Semiconductor luminescent device
	FUKUDA HIROKAZU; SHINOHARA KOUJI; NISHIJIMA YOSHITO; YAMAMOTO KOUSAKU
	1985-03-23
专利权人	FUJITSU KK
公开日期	1985-03-23
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent the deffusion of the electrode metal to the reflecting surface and to contrive the stabilization of characteristics by a method wherein the reflecting surface, which consists of mutually parallel two crystal planes, at the active region of the semiconductor laser is coated with a coating. CONSTITUTION:A clad layer 2, an active layer 3, a cald layer 4, an insulating layer 5 and electrodes 6 and 7 are formed on a lead telluride semiconductor substrate 1 and semiconductor laser is obtained. The active region of the laser is 3A and a reflector surface is formed by cleaving the semiconductor substrate crystal at the region 3A. For preventing it for the electrode metal to diffuse to the reflector surface, a coating 8 consisting of magnesium fluoride, barium fluoride, calcium fluoride or arsenious trisulfide sol is provided. According to such a way, laser beams are prevented from being shielded and the reflector surface is also prevented from being deteriorated as well, thereby enabling to stabilize the characteristics.
其他摘要	目的：为了防止电极金属泄漏到反射表面，并通过一种方法设计特性的稳定性，其中在半导体激光器的有源区域上由相互平行的两个晶面组成的反射表面涂有涂层。组成：在碲化铅半导体衬底1上形成包层2，有源层3，cald层4，绝缘层5和电极6和7，并获得半导体激光器。激光器的有源区是3A，并且通过在区域3A处切割半导体衬底晶体来形成反射器表面。为了防止电极金属扩散到反射器表面，提供了由氟化镁，氟化钡，氟化钙或亚砷三硫化物溶胶组成的涂层8。按照这种方式，防止了激光束被屏蔽，并且还防止了反射器表面的劣化，从而能够稳定特性。
申请日期	1983-08-31
专利号	JP1985052075A
专利状态	失效
申请号	JP1983159546
公开（公告）号	JP1985052075A
IPC 分类号	H01L33/10 \| H01L33/28 \| H01S5/00 \| H01S5/02 \| H01S5/028 \| H01S5/22 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/81804
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	FUKUDA HIROKAZU,SHINOHARA KOUJI,NISHIJIMA YOSHITO,et al. Semiconductor luminescent device. JP1985052075A[P]. 1985-03-23.

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