Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	KAYANE NAOKI; KURODA TAKAROU
	1983-11-09
专利权人	HITACHI SEISAKUSHO KK
公开日期	1983-11-09
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To manufacture a phased array type element with high output, low threshold value and excellent optical junction of arrays with each other by a method wherein the luminous output surface is covered with a material comprising a laser and a transparent film crystally connected on a laser device with two each or more laser luminous unit subject to optical junction with each other. CONSTITUTION:N type Ga0.6Al0.4As layer 3, Ga0.9Al0.1As active layer 4, P type Ga0.6Al0.4 As layer 5 are liquid epitaxially grown on GaAs substrate 2 further forming N type GaAs cap layer 6 thereon. Next an SiO2 film and both ends of the laminated layers are etched down to the substrate 2 from the top layer 6 while P type Ga0.6Al0.4 As layer 9 is grown on the etched part with the mask left as it is. Then stripe type Zn diffused regions 10-14 are formed up to the active layer 4 while the rear side of substrate 2 and the upper surface of the layer 6 are respectively coated with electrodes 1 and 7. Through these procedures, the area near the laser beam emitting end is covered with the layer 9 restraining the deterioration of the end in case of large output.
其他摘要	目的：通过一种方法制造具有高输出，低阈值和阵列的优良光学结的相控阵元件，其中发光输出表面覆盖有包括激光器和在激光器上结晶的透明膜的材料。具有两个或多个激光发光单元的装置经受彼此的光学结合。组成：N型Ga0.6Al0.4As层3，Ga0.9Al0.1As有源层4，P型Ga0.6Al0.4 As层5是在GaAs衬底2上外延生长的液体，在其上进一步形成N型GaAs盖层6。接下来，将SiO 2膜和层压层的两端从顶层6向下蚀刻到基板2，同时在蚀刻部分上生长P型Ga 0.6 Al 0.4 As层9，同时保持掩模不变。然后，条形Zn扩散区10-14形成到有源层4，而基板2的后侧和层6的上表面分别涂有电极1和7.通过这些步骤，激光附近区域光束发射端被层9覆盖，在大输出的情况下限制了端部的劣化。
申请日期	1982-05-07
专利号	JP1983192394A
专利状态	失效
申请号	JP1982075226
公开（公告）号	JP1983192394A
IPC 分类号	H01S5/00 \| H01S5/02 \| H01S5/028 \| H01S5/16 \| H01S5/40 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/81518
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	KAYANE NAOKI,KURODA TAKAROU. Semiconductor laser device. JP1983192394A[P]. 1983-11-09.

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