Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser element | |
其他题名 | Semiconductor laser element |
YAMAMOTO SABUROU; MURATA KAZUHISA; HAYASHI HIROSHI; TAKENAKA TAKUO | |
1982-10-23 | |
专利权人 | SHARP KK |
公开日期 | 1982-10-23 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To eliminate the unequal inclination of an impurity in the deviation region of the interface of an active layer by a method wherein an impurity doped in a crystal layer connected to an active layer and an active layer by a substrate side is made as the same kind of P type in a laser element which epitaxially grew multilayer crystal structure having the active layer on a P type semiconductor substrate. CONSTITUTION:A P type Ga1-yAlyAs clad layer 2' and a Ga1-xAlxAs active layer 3' doped the same impurity as that in the clad layer 2' are stacked on a P type GaAs substrate 1 for liquidus epitaxial growth. Namely, the active layer 3' is set as P type and the same kind of an impurity selected from Zn, Ge, Mg or the like is used as the impurity added to the layers 2' and 3'. In this way, unequally does not exist even if an impurity is mixed to the layer 3' from the layer 2'. After that, an N type Ga1-yAlyAs clad layer 4 and an N type GaAs cap layer 5 are stacked on the layer 3' for growth and if necessary, a current strangulation mechanism is provided. |
其他摘要 | 用途:通过如下方法消除有源层界面偏离区域中杂质的不均匀倾斜,其中掺杂在连接到有源层的晶体层和基板侧有源层的杂质是相同的在P型半导体衬底上外延生长具有有源层的多层晶体结构的激光元件中的P型。组成:P型Ga1-yAlyAs包层2'和掺杂与包层2'相同杂质的Ga1-xAlxAs有源层3'堆叠在P型GaAs衬底1上,用于液相线外延生长。即,有源层3'设置为P型,并且使用选自Zn,Ge,Mg等的相同种类的杂质作为添加到层2'和3'的杂质。以这种方式,即使杂质从层2'混合到层3',也不存在不等量。之后,在层3'上堆叠N型Ga1-yAlyAs包层4和N型GaAs盖层5用于生长,并且如果需要,提供电流扼制机构。 |
申请日期 | 1981-04-15 |
专利号 | JP1982172788A |
专利状态 | 失效 |
申请号 | JP1981057416 |
公开(公告)号 | JP1982172788A |
IPC 分类号 | H01S5/00 | H01S5/30 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/81482 |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KK |
推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,MURATA KAZUHISA,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982172788A[P]. 1982-10-23. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1982172788A.PDF(116KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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