Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	UENO SHINSUKE
	1983-01-24
专利权人	NIPPON DENKI KK
公开日期	1983-01-24
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser whereof the threshold current is low, the whole of the active region is buried with a matter having a small refractive index, and the device has the characteristic to perform extremely stable fundamental mode oscillation, and at the same time, the device is enabled to be manufactured having favorable reproducibility easily by one time liquid phase growth. CONSTITUTION:An SiO2 film 11 is adhered on the (100) face of an InP insulating substrate 10doped with Fe, an opening is formed as to be formed perpendicularly to the (01-1) face, and the half of the SiO2 film is removed. Then the SiO2 film 11 is removed, a P type InP clad layer 12 is made to grow as to have thickness along the A face to 0.5mum, and then an undoped InGaAsP active layer (lambda=3mum)13 is made to grow as to have thickness along the A face to 0.2mum. Then liquid phase growth is performed continuously as to bury the whole with an N type Inp clad layer 14, and as to make the upper part of the upper row part of stair to have 2mum thickness, and the respective layers are made to grow at the same time. When the wafer is put in a vacuum quartz ampoule together with a diffusion source Cd2P3 and is heated, Cd is diffused up to 2.4mum depth, and the diffusion front 16 reaches in the P type InP clad layer 12 (Cd diffusion region 17). Then a P type electrode 18 and an N type electrode 19 are formed.
其他摘要	目的：为了获得阈值电流较低的半导体激光器，整个有源区域被一个折射率较小的物质掩埋，器件具有执行极其稳定的基模振荡的特性，同时通过一次液相生长，该装置能够容易地制造成具有良好的再现性。组成：在Fe掺杂的InP绝缘基板10的（100）面上粘附SiO2薄膜11，形成垂直于（01-1）面形成的开口，并去除一半的SiO2薄膜。然后，除去SiO 2膜11，使P型InP包层12生长为沿A面的厚度为0.5μm，然后使未掺杂的InGaAsP有源层（λ=3μm）13生长为沿A面的厚度为0.2mum。然后连续地进行液相生长，以便用N型Inp包覆层14掩埋整体，并且使得楼梯的上排部分的上部具有2μm的厚度，并且使各层生长在同时。当将晶片与扩散源Cd2P3一起放入真空石英安瓿中并加热时，Cd扩散到2.4μm深，并且扩散前沿16到达P型InP包层12（Cd扩散区17）。然后形成P型电极18和N型电极19。
申请日期	1981-07-16
专利号	JP1983012389A
专利状态	失效
申请号	JP1981111409
公开（公告）号	JP1983012389A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/223 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/81043
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	UENO SHINSUKE. Semiconductor laser. JP1983012389A[P]. 1983-01-24.

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