Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	IKETA KAZUHIRO; YAMAMOTO YOSHIHISA; MACHIDA SUSUMU
	1989-12-01
专利权人	日本電信電話株式会社
公开日期	1989-12-01
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To suppress spontaneous emission process so that the electrons injected at a threshold current of zero may all be converted into photons of laser beams by forming two reflection mirrors at a distance below half the luminous wavelength, and arranging the distance between two reflection mirrors so that it may meet the lowest resonance condition to the luminous wavelength. CONSTITUTION:An active layer 1 to enclose electrons is made in the structure of quantum well fine line so as to make it interact only with one mode among two polarization modes crossing each other at right angles. That is, in the y- and z-axes directions, the electrons are shut in with the potential walls by clad layers 2 and 3 having band caps larger than the active layer 1, and only in this x-axis direction they are conveyed freely and injected through a p-n junction. Further dipole moment is formed only in the x-axis direction by the interaction with the electric field of the light. And to constitute a micro resonator below half the luminous wavelength, a substrate 4 is etched and the lower side of the p-n junction among the quantum well fine line 1 is thinned, and dielectric films 6 and 7, metal or dielectric multilayer film reflection mirrors 8 and 9 are deposited so as to make a microresonator. Hereby, as compared with usual semiconductor laser, the resonator length becomes smaller by about 10, and the electric field formed by one phonton becomes 10 times.
其他摘要	目的：抑制自发发射过程，以便在零阈值电流下注入的电子都可以通过在低于发光波长一半的距离处形成两个反射镜，并将两个反射镜之间的距离安排在一起，从而全部转换成激光束的光子。它可以满足发光波长的最低共振条件。组成：在量子阱细线的结构中制作一个包围电子的有源层1，使其仅与两种偏振模式中的一种模式相互作用，这两种偏振模式以直角相互交叉。也就是说，在y轴和z轴方向上，电子通过具有大于有源层1的带帽的包层2和3与电位壁封闭，并且仅在该x轴方向上它们被自由地传送。并通过pn结注入。通过与光的电场的相互作用，仅在x轴方向上形成另外的偶极矩。并且为了构成低于发光波长的一半的微谐振器，蚀刻衬底4并且减薄量子阱细线1中的pn结的下侧，以及介电膜6和7，金属或电介质多层膜反射镜8沉积9和9以制备微谐振器。因此，与通常的半导体激光器相比，谐振器长度变小约10-4，并且由一个光阑形成的电场变为104次。
申请日期	1988-05-27
专利号	JP1989298787A
专利状态	失效
申请号	JP1988129734
公开（公告）号	JP1989298787A
IPC 分类号	H01S3/08 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80820
专题	半导体激光器专利数据库
作者单位	日本電信電話株式会社
推荐引用方式 GB/T 7714	IKETA KAZUHIRO,YAMAMOTO YOSHIHISA,MACHIDA SUSUMU. Semiconductor laser device. JP1989298787A[P]. 1989-12-01.

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