Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	TODE ATSUSHI; YAMAMOTO SUNAO; IKEDA MASAO
	1991-12-06
专利权人	SONY CORP
公开日期	1991-12-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enhance a PL Iight-emitting intensity and to realize a lower threshold value and a longer life by specifying the carrier concentration at interface sides coming into contact with an active layer and in its neighborhood of an AlGaInP-based n-type clad layer and an AlGaInP-based p-type clad layer. CONSTITUTION:Regarding carrier concentrations of individual clad layers 2, 4 at a DH-type AlGaInP-based semiconductor laser 10, the n-type carrier concentration at the n-type clad layer 2 is set at 2 to 3X10 cm and the p-type carrier concentration at the p-type clad layer 4 is set at 3 to 4X10cm; then, the carrier concentrations become optimum and a PL light-emitting intensity becomes maximum. At this time, only a part of several hundred Angstrom near an active layer 3 of the semiconductor laser is set to an optimum carrier concentration; the carrier concentration in parts other than the part near the active layer 3 is set to a comparatively large carrier concentration as in conventional cases. As a result, the PL light-emitting intensity is enhanced without a drop in the element characteristic such as a drop in the carrier mobility or the like. Thereby, characteristics of a low threshold value, a long life and the like can be enhanced.
其他摘要	目的：通过指定与有源层接触的界面侧及其邻近的AlGaInP基n型覆盖层中的载流子浓度来增强PL发光强度并实现更低的阈值和更长的寿命和AlGaInP基p型包层。组成：关于DH型AlGaInP基半导体激光器10的各个包层2,4的载流子浓度，n型包层2的n型载流子浓度设定为2至3×10 17 cm 并且p型覆层4处的p型载流子浓度设定为3至4×1017cm-3;然后，载流子浓度变得最佳并且PL发光强度变得最大。此时，在半导体激光器的有源层3附近仅几百埃的一部分被设定为最佳载流子浓度;除了有源层3附近的部分之外的部分中的载流子浓度被设定为比常规情况下相对大的载流子浓度。结果，PL发光强度增强，而元件特性没有下降，例如载流子迁移率等的下降。由此，可以提高低阈值，长寿命等特性。
申请日期	1990-03-27
专利号	JP1991276785A
专利状态	失效
申请号	JP1990077975
公开（公告）号	JP1991276785A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80772
专题	半导体激光器专利数据库
作者单位	SONY CORP
推荐引用方式 GB/T 7714	TODE ATSUSHI,YAMAMOTO SUNAO,IKEDA MASAO. Semiconductor laser. JP1991276785A[P]. 1991-12-06.

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