Semiconductor element and manufacture thereof

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	Semiconductor element and manufacture thereof
其他题名	Semiconductor element and manufacture thereof
	KANEKO KUMIKO
	1992-02-05
专利权人	CANON INC
公开日期	1992-02-05
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor element having a dielectric film, which can facilitate film thickness control and refractive index control and can realize a desired reflectance over a wide wavelength range, by partially coating the light emitting/receiving face of the semiconductor element with the dielectric film and implanting ions into at least a part of the dielectric film. CONSTITUTION:An Al2O3 thin film layer 6 is formed through vacuum deposition, e.g., EB deposition, on the light emitting/receiving face of a semiconductor substrate Subsequently, an ion implanter implants Li so that the Al2O3 thin film layer 6 has an appropriate refractive index thus forming an ion implanted part 7 on the air side of the thin film layer 6. The thin film layer 6 is not limited to Al2O3 but any one of SiO2, MgO, CeF2, PbF2, LiF, MgF2 or the like can be employed so long as the refractive index n1 thereof is lower than the root of the refractive index ns of the semiconductor substrate The ion to be implanted into the thin film layer 6 is not limited to Li but any ion may be employed so long as the refractive index n1 of the thin film layer 6 is higher than the refractive index n2 in the ion implanting part 7.
其他摘要	目的：通过用电介质部分涂覆半导体元件的光发射/接收面，获得具有介电膜的半导体元件，其可以促进膜厚度控制和折射率控制并且可以在宽波长范围内实现期望的反射率将离子注入并注入到介电膜的至少一部分中。组成：Al2O3薄膜层6通过真空沉积，例如EB沉积，在半导体衬底1的光发射/接收面上形成。随后，离子注入机注入Li +，使得Al2O3薄膜层6具有适当的折射率，从而在薄膜层6的空气侧形成离子注入部分7.薄膜层6不限于Al 2 O 3，而是SiO 2，MgO，CeF 2，PbF 2，LiF，MgF 2或其中的任何一种。可以使用，只要其折射率n1低于半导体衬底1的折射率ns的根。要注入薄膜层6的离子不限于Li +，而是任何离子。只要薄膜层6的折射率n1高于离子注入部分7中的折射率n2，就可以使用。
申请日期	1990-05-31
专利号	JP1992035081A
专利状态	失效
申请号	JP1990142806
公开（公告）号	JP1992035081A
IPC 分类号	H01L31/10 \| H01L21/314 \| H01S5/00 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80699
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	KANEKO KUMIKO. Semiconductor element and manufacture thereof. JP1992035081A[P]. 1992-02-05.

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