Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	GOTO YUKIO
	1988-03-01
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1988-03-01
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser device, which can implement a short wavelength and can perform high output operation, by growing crystal layers, whose band gaps are wider than an active layer and lattice constants are smaller than that of a substrate, from a substrate, around the active layer in the vicinity of the end surface of a resonator. CONSTITUTION:Etching is performed in the vicinity of the end surface of a resonator. Thus, a contact layer 7, a clad layer 6, an active layer 5, a clad layer 4, a current blocking layer 3 and a clad layer 2 are removed. Crystal layers 11 and 12 are sequentially grown thereon. The band gaps of the crystal layers 11 and 12 are larger than the active layer 5. The lattice constants are smaller than that of a substrate When a voltage is applied, a current does not flow in the current blocking layer 3 and in the vicinity of the end surface of the resonator. The current flows only in an opening part in the element. A part of the active layer 5 located thereon becomes an active region. In the vicinity of the end surface of the resonator, the active region is surrounded by the crystal, whose lattice constant is small. Therefore stress due to lattice strain is applied, and the band gap in the active region is expanded. Thus, light absorption in this region is decreased, and high output can be implemented.
其他摘要	目的：通过生长晶体层（其带隙比有源层宽且晶格常数小于基板的晶格常数）从基板获得可实现短波长并可执行高输出操作的半导体激光器件，在谐振器端面附近的有源层周围。组成：蚀刻是在谐振器的端面附近进行的。因此，去除接触层7，包层6，有源层5，包层4，电流阻挡层3和包层2。在其上依次生长晶体层11和12。晶体层11和12的带隙大于有源层5.晶格常数小于衬底1的晶格常数。当施加电压时，电流不会在电流阻挡层3中流动，并且在电流阻挡层3中流动。谐振器端面附近。电流仅在元件的开口部分流动。位于其上的有源层5的一部分变为有源区。在谐振器的端面附近，有源区被晶体包围，晶格的晶格常数很小。因此，施加由晶格应变引起的应力，并且扩展有源区中的带隙。因此，该区域中的光吸收减少，并且可以实现高输出。
申请日期	1986-08-19
专利号	JP1988048888A
专利状态	失效
申请号	JP1986194221
公开（公告）号	JP1988048888A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/16 \| H01S5/223 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80639
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	GOTO YUKIO. Semiconductor laser device. JP1988048888A[P]. 1988-03-01.

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