Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	KINOSHITA HIDEAKI; MATSUURA NOBUYUKI
	1987-10-26
专利权人	TOKYO SHIBAURA ELECTRIC CO
公开日期	1987-10-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To relieve the distortion due to the stress on a double stereo structure by a method wherein a buffer layer with the same conductivity type as that of a clad layer and the lattice constant between the clad layer and the substrate is provided between the substrate and the clad layer on the same side as that of the substrate opposing to the active layers. CONSTITUTION:An N type GaAs layer 2, an N type Al0.3Ga0.7As buffer 23, an N type Al0.45Ga0.55As clad 4 are laminated on an N type GaAs substrate 1 while the mixed crystal ratio of layer 23 is made less than that of the layer 4 to relieve the stress distortion in the grown layer formed on the upper part. First, an active layer AlyGa1-7As(undoped) 5 with mixed ratio y =0-0.15,a P type Al0.45Ga0.55As clad 6 and an N type Al0.3Ga0.7 As current strangulation layer 28 are laminated and then the layer 28 is etched to make a strip-groove 7. Second, a P type Al0.45Ga0.55As 9, a P type GaAs connecting layer 10 are laminated and then a Cr-Au electrode 11, an Au-Ge electrode 12 are formed. In such a constitution, the lattice alignment between substrate side clad and active layer can be improved to relieve the stress distortion so that in the active layers laminated in upper part, the lattice defect due to the stress distortion may be relieved to improve the luminescent efficiency and other characteristics.
其他摘要	目的：通过一种方法减轻由于双立体结构上的应力引起的变形，其中在衬底和衬底之间提供具有与包层相同的导电类型的缓冲层和包层与衬底之间的晶格常数。包层与基板相对的一侧与有源层相对。组成：N型GaAs层2，N型Al0.3Ga0.7As缓冲层23，N型Al0.45Ga0.55As包层4层叠在N型GaAs衬底1上，同时层23的混晶比减少与层4相比，减轻了在上部形成的生长层中的应力变形。首先，层叠混合比y = 0-0.15的有源层AlyGa1-7As（未掺杂）5，P型Al0.45Ga0.55As包层6和N型Al0.3Ga0.7 As电流扼制层28，然后层叠蚀刻层28以形成条形沟槽7.其次，层叠P型Al0.45Ga0.55As9，P型GaAs连接层10，然后形成Cr-Au电极11，Au-Ge电极12 。在这种结构中，可以改善衬底侧包层和有源层之间的晶格排列，以减轻应力变形，从而在层叠在上部的有源层中，可以减轻由应力变形引起的晶格缺陷，从而提高发光效率。和其他特点。
申请日期	1986-04-18
专利号	JP1987245689A
专利状态	失效
申请号	JP1986088091
公开（公告）号	JP1987245689A
IPC 分类号	H01L33/12 \| H01L33/14 \| H01L33/30 \| H01L33/40 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80343
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA ELECTRIC CO
推荐引用方式 GB/T 7714	KINOSHITA HIDEAKI,MATSUURA NOBUYUKI. Semiconductor light emitting device. JP1987245689A[P]. 1987-10-26.

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