Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser element | |
其他题名 | Semiconductor laser element |
TANAKA TOSHIAKI; KONO TOSHIHIRO; KAJIMURA TAKASHI | |
1991-04-19 | |
专利权人 | HITACHI LTD |
公开日期 | 1991-04-19 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain high output and low noise characteristics by burying a ridge waveguide strip with a current narrowing layer used also as a light absorption layer, reducing the current narrowing width smaller than the optical waveguide width, and regulating the height of the stripe. CONSTITUTION:Energy band gap of upper and lower optical waveguides 5 and 3 is increased larger than that of an active layer 4, and the layer 4 is formed in a single or multiple quantum wall structure having a thickness of 10-30nm of electron de Broglie wavelength or less and at least one quantum well layer. Further, the thickness of the film at the part not formed with the ridge waveguide stripe 5' of the upper optical waveguide is controlled to set the difference of the effective refractive indexes between a region under the stripe 5' and the remaining region in the layer 4 in a range of 8X10-5X10. Thus, high output characteristic for obtaining a light output or more necessary for writing and erasing a memory and low noise characteristic of the case in which relative noise intensity generates a returning light can be simultaneously satisfied by one element. |
其他摘要 | 目的:通过掩埋具有电流窄化层的脊形波导带来获得高输出和低噪声特性,该电流窄化层也用作光吸收层,减小电流窄化宽度小于光波导宽度,并调节条纹的高度。组成:上下光波导5和3的能带隙增加大于有源层4的能带隙,并且层4形成单个或多个量子壁结构,厚度为10-30nm的电子德布罗意波长或更小以及至少一个量子阱层。此外,控制未形成上光波导的脊形波导条纹5'的部分处的膜厚度,以设定条纹5'下方的区域与层中的其余区域之间的有效折射率之差。 4在8×10 -4 -5×10 -3的范围内。因此,可以通过一个元件同时满足用于获得光输出的更高输出特性或者更多写入和擦除存储器所需的输出特性以及相对噪声强度产生返回光的情况的低噪声特性。 |
申请日期 | 1989-01-10 |
专利号 | JP1991094490A |
专利状态 | 失效 |
申请号 | JP1989001392 |
公开(公告)号 | JP1991094490A |
IPC 分类号 | H01S5/00 | H01S5/042 | H01S5/065 | H01S5/22 | H01S5/223 | H01S5/30 | H01S5/34 | H01S5/343 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/80336 |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,KONO TOSHIHIRO,KAJIMURA TAKASHI. Semiconductor laser element. JP1991094490A[P]. 1991-04-19. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1991094490A.PDF(365KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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