Semiconductor laser and manufacture thereof

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	Semiconductor laser and manufacture thereof
其他题名	Semiconductor laser and manufacture thereof
	OSHIMA HIROYUKI
	1987-11-13
专利权人	SEIKO EPSON CORP
公开日期	1987-11-13
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser characterized by high light emitting efficiency and a low threshold current value, by simultaneously forming an active layer and the third and fourth clad layers in a planar state, by a chemical vapor growth method of organic metal, by which light is selectively emitted by using a mask. CONSTITUTION:The raw material gases of Hs, AsH3, H2Se, TMGa, TMAl and DEZn are introduced into a chamber 404 through mass-flow controllers (MFC). Then the gases are reacted, and thin films of GaAs, AlGaAs and the like are epitaxially grown. A susceptor 407 is heated to 600-800 deg.C by induction heating using an RF coil 405. Meanwhile, light is emitted from a light source 401 such as an excimer laser unit and projected on a substrate 406 through a mirror 2. A mask 403 is provided in-between. The light is projected on the arbitrary positions of the substrate in correspondence with the mask pattern, and epitaxial growing can be performed. Thus the semiconductor laser characterized by a small threshold current level and high light emitting efficiency can be formed stably at a high yield rate.
其他摘要	目的：通过有机金属的化学气相生长方法，通过在平面状态下同时形成有源层和第三和第四包层，获得具有高发光效率和低阈值电流值的半导体激光器。通过使用掩模选择性地发射光。组成：Hs，AsH3，H2Se，TMGa，TMAl和DEZn的原料气体通过质量流量控制器（MFC）引入腔室404。然后使气体反应，外延生长GaAs，AlGaAs等薄膜。使用RF线圈405通过感应加热将基座407加热到600-800℃。同时，光从诸如准分子激光器单元的光源401发射并通过镜子2投射在基板406上。在它们之间提供403。根据掩模图案将光投射到基板的任意位置，并且可以进行外延生长。因此，可以以高产率稳定地形成以小阈值电流水平和高发光效率为特征的半导体激光器。
申请日期	1986-05-08
专利号	JP1987261188A
专利状态	失效
申请号	JP1986105488
公开（公告）号	JP1987261188A
IPC 分类号	H01L21/205 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80246
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	OSHIMA HIROYUKI. Semiconductor laser and manufacture thereof. JP1987261188A[P]. 1987-11-13.

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