Semiconductor laser array device

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	Semiconductor laser array device
其他题名	Semiconductor laser array device
	ITOU KUNIO; WADA MASARU; SHIMIZU YUUICHI
	1986-01-07
专利权人	MATSUSHITA DENKI SANGYO KK
公开日期	1986-01-07
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a laser array which perform a high output array and equivalent role at the less array light emitting point by asymmetrically distributing the near visual field image when all light emitting points are simultaneously emitted, and providing a sharp peak at the end of the near visual field image. CONSTITUTION:An active region 3 is stepwise of 5mum of pitch, the step of stage is 0.01mum, n type Ga0.7Al0.3As film 2 is accumulated on an n type GaAs film 1 2mum, a Ga0.93Al0.07As film 3 is accumulated 0.2mum to be selectively chemically etched in the prescribed stepwise state, and a p type Ga0.7Al0.3As film 4 is superposed 2mum, and an n type GaAs film 5 is superposed 1mum. A Zn diffused region 7 is formed in the necessary step, and electrodes 9, 10 are attached. The light distribution of the laser array is very strong in the light intensity at the end. Accordingly, when one point on the optical disk is melted, necessary portion is first heated by the light of the maximum light density, the other portion of small light density is then emitted to melt with low output, thereby reducing the output of the entire array, and providing high efficiency. With this construction, low output as the entirety performs effect equivalent to high output array.
其他摘要	目的：通过在所有发光点同时发射时通过不对称地分布近视场图像来获得在较少阵列发光点处执行高输出阵列和等同作用的激光阵列，并且在所有发光点同时发射时提供尖峰近视野的图像。结构：有源区3是5μm间距的阶梯状，台阶为0.01μm，n型Ga0.7Al0.3As膜2在n型GaAs膜1 2um上积累，Ga0.93Al0.07As膜3为累积0.2um，以规定的阶梯状态进行选择性化学蚀刻，p型Ga0.7Al0.3As膜4叠加2um，n型GaAs膜5叠加1um。在必要的步骤中形成Zn扩散区7，并且连接电极9,10。激光器阵列的光分布在光强度方面非常强。因此，当光盘上的一个点被熔化时，必要部分首先被最大光密度的光加热，然后小的光密度的另一部分被发射以低输出熔化，从而减少了整个阵列的输出，并提供高效率。采用这种结构，作为整体的低输出效果相当于高输出阵列。
申请日期	1984-06-13
专利号	JP1986001076A
专利状态	失效
申请号	JP1984119834
公开（公告）号	JP1986001076A
IPC 分类号	H01S5/00 \| H01S5/40 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80160
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	ITOU KUNIO,WADA MASARU,SHIMIZU YUUICHI. Semiconductor laser array device. JP1986001076A[P]. 1986-01-07.

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