Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser devices | |
其他题名 | Semiconductor laser devices |
MORI, YOSHIHIRO; OTSUKA, NOBUYUKI | |
1994-05-10 | |
专利权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
公开日期 | 1994-05-10 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A semiconductor laser device emits a stable and extremely high optical output. An etching-stop layer is formed at the interface between an active layer and a waveguide layer underlying the active layer, or in a waveguide layer, the layers above the etching-stop layer is processed in a stripe-shaped mesa. Subsequently, a current-blocking layer comprising thin layers of different conductivity type is formed above the etching-stop layer, the thickness of the etching-stop layer being so thin as not to distort the optical intensity distribution of laser light. Alternatively, an active layer and clad layers overlying and underlying the active layer is formed, and a current-blocking layer comprising thin layers of different composition which are alternatively stacked is formed. The conductivity type of the thin layers is reversed at least once during consecutive stacking, and the equivalent refractive index is larger than that of a semiconductor substrate and smaller than that of the mesa. |
其他摘要 | 半导体激光器件发出稳定且极高的光输出。在有源层和有源层下面的波导层之间的界面处形成蚀刻停止层,或者在波导层中,在条形台面中处理蚀刻停止层上方的层。随后,在蚀刻停止层上方形成包括不同导电类型的薄层的电流阻挡层,蚀刻停止层的厚度很薄,以不扭曲激光的光强度分布。或者,形成覆盖有源层并位于有源层下面的有源层和包层,并且形成包括交替堆叠的不同组分的薄层的电流阻挡层。在连续堆叠期间,薄层的导电类型至少反转一次,并且等效折射率大于半导体衬底的等效折射率并且小于台面的等效折射率。 |
申请日期 | 1993-06-22 |
专利号 | US5311534 |
专利状态 | 失效 |
申请号 | US08/081014 |
公开(公告)号 | US5311534 |
IPC 分类号 | H01S5/00 | H01S5/227 | H01S5/343 | H01S5/22 | H01S5/20 | H01S3/19 |
专利代理人 | - |
代理机构 | RATNER & PRESTIA |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/79584 |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
推荐引用方式 GB/T 7714 | MORI, YOSHIHIRO,OTSUKA, NOBUYUKI. Semiconductor laser devices. US5311534[P]. 1994-05-10. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US5311534.PDF(822KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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