Semiconductor lasers

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	Semiconductor lasers
其他题名	Semiconductor lasers
	-
	1975-06-25
专利权人	WESTERN ELECTRIC CO INC
公开日期	1975-06-25
授权国家	英国
专利类型	授权发明
摘要	1398635 Electroluminescence WESTERN ELECTRIC CO Inc 27 July 1972 [27 July 1971] 35130/72 Heading C4S [Also in Division H1] A double heterostructure semi-conductor laser comprises a first active region 15, 19, Fig. IA, defined between two heterojunctions 20, 22, a second active region 17 substantially centrally disposed within the first region and defined by third and fourth heterojunctions 21, 23, and a p-n junction 11 between the third and fourth heterojunctions or coincident with one of them, the refractive index steps 21c, 23c, Fig. 1c, at the third and fourth heterojunctions being such as to confine injected holes and electrons to the second active region 17, while at the same time permitting generated radiation to penetrate into the first active region 15, 19, and the refractive index steps 20c, 22c at the first and second heterojunctions being such as to confine the fundamental transverse mode of the generated radiation between these junctions while at the same time permitting higher outer transverse modes of the generated radiation to penetrate beyond these junctions for absorption in the adjacent semi-conductor regions 12 and 18. The semi-conductor is built up of epitaxial layers on an n-type GaAs substrate 31 about 3-4 mils thick, Fig. 2, and comprises an ntype Al x Ga 1-x As layer 14 about 3 Ám. thick, and a first active region formed of Al y Ga 1-y As about 3 Ám. thick, this region being divided into an n-type layer 15 and a p-type layer 19. The second active region between layers 15 and 19 consists of GaAs or Al r Ga 1-r As about 0À2 Ám. thick which may be either p- or n-type or compensated. The final layer 18 consists of p-type Al z Ga 1-z As. The relationships between x, y, r and z are y
其他摘要	1398635电致发光WESTERN ELECTRIC CO公司1972年7月27日[1971年7月27日] 35130/72标题C4S [同样在H1部分]双异质结构半导体激光器包括第一有源区15,19，图1A，定义在两个异质结之间20 22，第二有源区17基本上居中地设置在第一区域内并由第三和第四异质结21,23和第三和第四异质结之间的pn结11或与它们中的一个重合，折射率步骤21c，如图23c，图1c所示，在第三和第四异质结处，将注入的空穴和电子限制在第二有源区17，同时允许产生的辐射穿透到第一有源区15,19和折射在第一和第二异质结处的折射率阶梯20c，22c是为了限制在这些结之间产生的辐射的基本横向模式，同时允许gher所产生的辐射的外横向模式穿过这些结以便在相邻的半导体区域12和18中吸收。半导体由n型GaAs衬底31上的外延层构成，厚度约为3-4密耳，图2包括约3μm的n型Al x Ga 1-x As层14。厚的，并且由Al y Ga 1-y As形成的第一有源区约为3μm。该区域被分成n型层15和p型层19.层15和19之间的第二有源区由GaAs或Al r Ga 1-r As组成，约为0-2μm。厚的，可以是p型或n型或补偿的。最后的层18由p型Al z Ga 1-z As组成。 x，y，r和z之间的关系是y
申请日期	1972-07-27
专利号	GB1398635A
专利状态	失效
申请号	GB1972035130
公开（公告）号	GB1398635A
IPC 分类号	H01S5/30 \| H01S5/00 \| H01S5/024 \| H01L33/00 \| H01S3/19
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/79552
专题	半导体激光器专利数据库
作者单位	WESTERN ELECTRIC CO INC
推荐引用方式 GB/T 7714	-. Semiconductor lasers. GB1398635A[P]. 1975-06-25.

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