Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor light-emitting element | |
其他题名 | Semiconductor light-emitting element |
KOMATSUBARA TADASHI; SADAMASA TETSUO | |
1986-04-15 | |
专利权人 | TOSHIBA CORP |
公开日期 | 1986-04-15 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To give even an optical extracting window an effective electrode function, to increase longitudinal currents in currents flowing through a light- emitting layer consisting of a double hetero-junction and to improve luminous efficiency by forming a GaAlAs layer having low resistance and low Al concentration onto the light-emitting layer and using the GaAlAs layer as the optical extracting window. CONSTITUTION:An n-type GaAs layer 22 as a current constriction layer is deposited on a p-type GaAs substrate 21, a p-type GaAs layer 23 is diffused and formed at the central section of the layer 22, and a p-type GaAlAs clad layer 24 constituting a light-emitting layer consisting of a double hetero-junction, a p-type GaAlAs active layer 25, and an n-type GaAlAs clad layer 26 are laminated and grown on the whole surface containing the layer 23. An n-type GaAlAs layer 27, the composition ratio of Al therein is approximately twice as large as the active layer 25 and impurity concentration thereof extends over 1X10/cm or more, is deposited onto the layer 26, an n type GaAs cap layer 28 and an electrode 29 are shaped onto the layer 27, and an optical extracting window 31 is bored to expose one part of the layer 27. An electrode 30 is also provided onto the back of the substrate 2 |
其他摘要 | 目的:为光学提取窗提供有效的电极功能,增加流过由双异质结组成的发光层的电流中的纵向电流,并通过形成具有低电阻和低Al的GaAlAs层来提高发光效率浓缩到发光层上并使用GaAlAs层作为光学提取窗口。组成:作为电流收缩层的n型GaAs层22沉积在p型GaAs衬底21上,p型GaAs层23扩散并形成在层22的中心部分,并形成p型构成由双异质结构成的发光层的GaAlAs包层24,p型GaAlAs有源层25和n型GaAlAs包层26层叠并生长在包含层23的整个表面上。 n型GaAlAs层27,其中Al的组成比约为有源层25的两倍,并且其杂质浓度超过1×10 18 / cm 3或更高,沉积在层26上,n 型GaAs盖层28和电极29成形在层27上,并且光学提取窗口31钻孔以暴露层27的一部分。电极30也设置在基板21的背面上。 |
申请日期 | 1984-09-18 |
专利号 | JP1986073388A |
专利状态 | 失效 |
申请号 | JP1984193960 |
公开(公告)号 | JP1986073388A |
IPC 分类号 | H01L33/14 | H01L33/30 | H01L33/40 | H01S5/00 | H01L33/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/79527 |
专题 | 半导体激光器专利数据库 |
作者单位 | TOSHIBA CORP |
推荐引用方式 GB/T 7714 | KOMATSUBARA TADASHI,SADAMASA TETSUO. Semiconductor light-emitting element. JP1986073388A[P]. 1986-04-15. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1986073388A.PDF(154KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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