Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	KURUMADA KATSUHIKO; NAKANO YOSHINORI; FUKUDA MITSUO; TSUZUKI NOBUYORI; MOTOSUGI TSUNEJI
	1988-04-26
专利权人	NIPPON TELEGR & TELEPH CORP
公开日期	1988-04-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve performance and yield on manufacture by forming a clad layer in a semiconductor layer consisting of the semiconductor of the same element as an active layer and having a composition ratio at which forbidden band width is made wider than said active layer and narrower than a semiconductor substrate. CONSTITUTION:An active layer 1 is composed of non-doped or p type InGaAsP and has a wavelength of 55mum, an upper-layer first clad layer 2 is made up of p-type InGaAsP, and it is preferable that the wavelength of the upper-layer first clad layer 2 is kept within a range to 0mum from 3mum and layer thickness exceeds 0.4mum. The active layer 1 and the upper-layer first clad layer p-type InGaAsP 2 are grown onto an n-type InP substrate 5 functioning as a lower- layer first clad layer in an epitaxial manner in succession, said double hetero- growth layers are etched by using a normal photolithographic technique, and buried growth layers aiming at the confinement of light waves to the cross direction of the active layer 1 and injected carriers are grown in the epitaxial manner in order of a p-type InP layer 6 and an n-type InP layer 7.
其他摘要	用途：通过在由与有源层相同的元素的半导体构成的半导体层中形成包层，并且具有使禁带宽度比所述有源层宽并且比所述有源层宽的组成比，来提高制造性能和产量。半导体衬底。组成：有源层1由非掺杂或p - 型InGaAsP组成，波长为55μm，上层第一包层2由p型InGaAsP组成，最好是上层第一包层2的波长从3μm保持在0μm的范围内，层厚超过0.4μm。有源层1和上层第一包层p型InGaAsP 2以外延方式连续生长到用作下层第一包层的n型InP衬底5上，所述双异质生长层是通过使用普通的光刻技术进行蚀刻，并且针对光波限制到有源层1的横向的掩埋生长层和注入的载流子以p型InP层6和n的顺序以外延方式生长。 -in InP层7。
申请日期	1986-10-13
专利号	JP1988095688A
专利状态	失效
申请号	JP1986241455
公开（公告）号	JP1988095688A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/79520
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	KURUMADA KATSUHIKO,NAKANO YOSHINORI,FUKUDA MITSUO,et al. Semiconductor laser device. JP1988095688A[P]. 1988-04-26.

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