Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	WADA HIROSHI; HORIKAWA HIDEAKI; MATSUI YASUHIRO
	1990-09-28
专利权人	OKI ELECTRIC IND CO LTD
公开日期	1990-09-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent the recombination of holes with electrons and to obtain a laser device excellent in high speed modulation property by a method wherein an n-type layer is provided between a current constriction layer and a p-type layer in contact with it. CONSTITUTION:A waveguide layer 31 and an active layer 33 both of GaInAsP are provided on to a p-InP substrate 2, and an n-InP clad layer 35 and an n- GaInAsP cap 37 are laminated thereon through an epitaxial growth method. An SiO2 mask 45 is provided, and the substrate 27 is etched using a mixed solution of hydrochloric acid and nitric acid in the ratio 1:2 to form a double hetero-structure 29, whose side face is made vertical to the substrate 27. In succession, an n-InP hole diffusion block layer 47 and an Fe doped InP current constriction layer 39 are vapor-grown on both the sides of a mesa to make the surface flat. The mask 45 is removed, an SiO2 film 45 is formed on the current constriction layer 39, an n-side electrode 41a of Au-Ge-Ni alloy and a p-side electrode of 41b Au-Zn alloy are provided, and thus a semiconductor laser device is completed. A hole diffusion block layer being provided, the recombination of electrons with holes is prevented, a leakage current is reduced, and an optical output is prevented from deteriorating.
其他摘要	目的：通过在电流收缩层和与其接触的p型层之间提供n型层的方法，防止空穴与电子再结合并获得高速调制性能优异的激光器件。组成：在p-InP衬底2上提供波导层31和有源层33 GaInAsP，并通过外延生长方法在其上层叠n-InP包层35和n-GaInAsP帽37。提供SiO 2掩模45，并使用盐酸和硝酸的比例为1：2的混合溶液蚀刻基板27，以形成双异质结构29，其侧面垂直于基板27。接着，在台面的两侧气相生长n-InP空穴扩散阻挡层47和Fe掺杂InP电流收缩层39，以使表面平坦。去除掩模45，在电流限制层39上形成SiO2膜45，提供Au-Ge-Ni合金的n侧电极41a和41b Au-Zn合金的p侧电极，因此，半导体激光器件完成。提供空穴扩散阻挡层，防止电子与空穴的复合，减小漏电流，并防止光输出劣化。
申请日期	1989-03-16
专利号	JP1990244690A
专利状态	失效
申请号	JP1989064764
公开（公告）号	JP1990244690A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/79492
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	WADA HIROSHI,HORIKAWA HIDEAKI,MATSUI YASUHIRO. Semiconductor laser device. JP1990244690A[P]. 1990-09-28.

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