Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
WADA HIROSHI; HORIKAWA HIDEAKI; MATSUI YASUHIRO | |
1990-09-28 | |
专利权人 | OKI ELECTRIC IND CO LTD |
公开日期 | 1990-09-28 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To prevent the recombination of holes with electrons and to obtain a laser device excellent in high speed modulation property by a method wherein an n-type layer is provided between a current constriction layer and a p-type layer in contact with it. CONSTITUTION:A waveguide layer 31 and an active layer 33 both of GaInAsP are provided on to a p-InP substrate 2, and an n-InP clad layer 35 and an n- GaInAsP cap 37 are laminated thereon through an epitaxial growth method. An SiO2 mask 45 is provided, and the substrate 27 is etched using a mixed solution of hydrochloric acid and nitric acid in the ratio 1:2 to form a double hetero-structure 29, whose side face is made vertical to the substrate 27. In succession, an n-InP hole diffusion block layer 47 and an Fe doped InP current constriction layer 39 are vapor-grown on both the sides of a mesa to make the surface flat. The mask 45 is removed, an SiO2 film 45 is formed on the current constriction layer 39, an n-side electrode 41a of Au-Ge-Ni alloy and a p-side electrode of 41b Au-Zn alloy are provided, and thus a semiconductor laser device is completed. A hole diffusion block layer being provided, the recombination of electrons with holes is prevented, a leakage current is reduced, and an optical output is prevented from deteriorating. |
其他摘要 | 目的:通过在电流收缩层和与其接触的p型层之间提供n型层的方法,防止空穴与电子再结合并获得高速调制性能优异的激光器件。组成:在p-InP衬底2上提供波导层31和有源层33 GaInAsP,并通过外延生长方法在其上层叠n-InP包层35和n-GaInAsP帽37。提供SiO 2掩模45,并使用盐酸和硝酸的比例为1:2的混合溶液蚀刻基板27,以形成双异质结构29,其侧面垂直于基板27。接着,在台面的两侧气相生长n-InP空穴扩散阻挡层47和Fe掺杂InP电流收缩层39,以使表面平坦。去除掩模45,在电流限制层39上形成SiO2膜45,提供Au-Ge-Ni合金的n侧电极41a和41b Au-Zn合金的p侧电极,因此,半导体激光器件完成。提供空穴扩散阻挡层,防止电子与空穴的复合,减小漏电流,并防止光输出劣化。 |
申请日期 | 1989-03-16 |
专利号 | JP1990244690A |
专利状态 | 失效 |
申请号 | JP1989064764 |
公开(公告)号 | JP1990244690A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/79492 |
专题 | 半导体激光器专利数据库 |
作者单位 | OKI ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | WADA HIROSHI,HORIKAWA HIDEAKI,MATSUI YASUHIRO. Semiconductor laser device. JP1990244690A[P]. 1990-09-28. |
条目包含的文件 | ||||||
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JP1990244690A.PDF(661KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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