Semiconductor light-emitting element and manufacture thereof

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	Semiconductor light-emitting element and manufacture thereof
其他题名	Semiconductor light-emitting element and manufacture thereof
	HINO ISAO
	1988-04-04
专利权人	NEC CORP
公开日期	1988-04-04
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To realize a semiconductor light-emitting element having structure excellently controlling a transverse mode easily with superior controllability and reproducibility, and to manufacture the semiconductor light-emitting element having high performance with high yield and excellent productivity by forming an etching stopping layer damaging no waveguide mechanism. CONSTITUTION:Etching is conducted for seven min by a phosphoric acid group etchant. Sections 14 not coated with an SiO2 film 13 of a P-GaAs cap layer 8 and a P-Al0.5In0.5P layer 7 are removed through etching for approximately six min, and an (Al0.4Ga0.6)0.5In0.5P layer 5 (an etching stopping layer) is hardly etched. Since etching can be stopped positively by the (Al0.4Ga0.6)0.5In0.5P layer 5 even when the layers 8 and 7 are etched for a little longer time, remaining thickness can be controlled with high yield and high accuracy. When an N-GaAs layer is grown in 2mum through an MOVPE method, etc., it is not grown on the SiO2 film 13, and can be grown selectively, and a buried layer consisting of an N-GaAs layer 6 can be shaped. An Al0.5In0.5P three-dimensional layer is used as the principal section of a clad layer.
其他摘要	目的：通过形成具有优异的可控性和再现性的半导体发光元件，实现具有极好控制横向模式的结构的半导体发光元件，并且通过形成损坏no的蚀刻停止层来制造具有高产率和高生产率的高性能半导体发光元件。波导机制。组成：磷酸基蚀刻剂蚀刻7分钟。未涂覆P-GaAs盖层8和P-Al0.5In0.5P层7的SiO2膜13的部分14通过蚀刻去除约6分钟，并且（Al0.4Ga0.6）0.5In0.5P层5（蚀刻停止层）几乎不被蚀刻。由于即使当层8和7被蚀刻更长时间时，（Al0.4Ga0.6）0.5In0.5P层5也可以积极地停止蚀刻，因此可以高产率和高精度地控制剩余厚度。当通过MOVPE法等以2μm生长N-GaAs层时，它不在SiO2膜13上生长，并且可以选择性地生长，并且可以成形由N-GaAs层6组成的掩埋层。 Al0.5In0.5P三维层用作包层的主要部分。
申请日期	1986-09-16
专利号	JP1988073582A
专利状态	失效
申请号	JP1986218399
公开（公告）号	JP1988073582A
IPC 分类号	H01L33/14 \| H01L33/30 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/79385
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	HINO ISAO. Semiconductor light-emitting element and manufacture thereof. JP1988073582A[P]. 1988-04-04.

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