半導体レーザ装置

OPT OpenIR > 半导体激光器专利数据库

	半導体レーザ装置
其他题名	半導体レーザ装置
	河西秀典; 林寛; 矢野盛規; 森本泰司; 山口雅広
	1996-09-05
专利权人	シャープ株式会社
公开日期	1996-11-27
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To obtain a highly reliable laminated structure even in the state of a high output power, by forming the laminated structure having a Ga1-yAlyAs layer having a stripe like opening, a current passage having a width that is narrower than that of the opening and provided in the opening, and a Ga1-zAlzAs layer. CONSTITUTION:An n-type Ga0.58Al0.42As layer 19 and an undopped GaAs etchback layer 20 are caused to grow on a substrate 11 and with the exception of only the width part W3 of 7mum in the layer 19, all of them are removed. Then, an n-type GaAs current blocking layer 12a is caused to grow and a V-shaped groove 1 is formed in order to make up a laser stripe. The V-groove 1 is formed so that it may reach the substrate 11 and an electric passage is opened. Further, a p-type Ga0.58Al0.42As clad layer 13, a p-type or an n-type Ga0.86Al0.14As active layer 14, an n-type Ga0.58Al0.42 As clad layer 15, and an n-type GaAs contact layer 16 are caused to grow. Subsequently, p-side and n-side electrodes 21 and 22 are provided. After carrying out an alloy treatment, cleavage is performed to make up a laser resonator. The current passage having a width narrower than that of a light emitting region is formed and as a result, optical absorption at a current bottleneck layer is decreased and higher order beam mode oscillations are suppressed by the above current passage.
其他摘要	用途：为了即使在高输出功率状态下也获得高度可靠的层叠结构，通过形成具有条状开口的Ga1-yAlyAs层的层叠结构，宽度比开口窄的电流通道并且在开口中提供Ga1-zAlzAs层。组成：使n型Ga0.58Al0.42As层19和未掺杂的GaAs凹蚀层20在基板11上生长，除了层19中仅7μm的宽度部分W3之外，所有这些都被去除。然后，使n型GaAs电流阻挡层12a生长，并形成V形槽1以构成激光条纹。形成V形槽1使得它可以到达基板11并且打开电通道。此外，p型Ga0.58Al0.42As包层13，p型或n型Ga0.86Al0.14As有源层14，n型Ga0.58Al0.42As包层15和n使GaAs接触层16生长。随后，提供p侧和n侧电极21和22。在进行合金处理之后，进行解理以构成激光谐振器。形成宽度窄于发光区域的电流通道，结果，减小了电流瓶颈层处的光吸收，并且通过上述电流通路抑制了高阶光束模式振荡。
申请日期	1987-12-29
专利号	JP2558767B2
专利状态	失效
申请号	JP1987332705
公开（公告）号	JP2558767B2
IPC 分类号	H01S \| H01S5/00 \| H01S3/18
专利代理人	山本秀策
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/79338
专题	半导体激光器专利数据库
作者单位	シャープ株式会社
推荐引用方式 GB/T 7714	河西秀典,林寛,矢野盛規,等. 半導体レーザ装置. JP2558767B2[P]. 1996-09-05.

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